PROSPECTS OF InP-BASED IC TECHNOLOGIES FOR 100-GBIT/S-CLASS LIGHTWAVE COMMUNICATIONS SYSTEMS

Abstract

This paper describes the device technologies that will be instrumental in achieving 100-Gbit/s-class ultrahigh-speed lightwave communications systems and clarifies the device technology issues we must address before we can make such systems a reality. At the interface between optical and electrical units, their monolithic integration is necessary and a uni-traveling carrier photodiode (UTC-PD) enables us to simplify the interface circuits. In high-speed circuits, InP-based HEMT's and HBT's will still be key devices. Further scaling down of HEMTs and reduction of their parasitic capacitance are the major subjects to achieve lOOGbit/s operations. For HBT's, reduction of the product of feedback capacitance and base resistance are necessary. Estimations of operation speed for basic circuits in lightwave communications systems are summarized to set targets for designing device structures.