Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Bader, Samuel James; Lee, Hyunjea; Chaudhuri, Reet; Huang, Shi-Min; Hickman, Austin; Molnar, Alyosha; Xing, Huili Grace; Jena, Debdeep; Then, Han Wui; Chowdhury, Nadim; Palacios, Tomás

doi:10.1109/ted.2020.3010471

Cited by 90 publications

(48 citation statements)

References 132 publications

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“…Particularly promising would be a complementary circuit in which a p-channel diamond FET and an n-channel GaN-based FET are integrated. 1,20 The hole mobility in our FETs increases with decreasing temperature from 300 to 150 K and exceeds 1000 cm 2 V −1 s −1 at 150 K. This observation indicates that the contribution of phonon scattering to mobility in this temperature range, which had been obscured by ionized impurity scattering in previous studies, is now clear. Since the phonon-limiting hole mobility is higher than 2000 cm 2 V −1 s −1 at room temperature in bulk diamond [13][14][15][16] , there should still be room for improving the mobility of diamond FETs.…”

supporting

confidence: 50%

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Sasama,

Kageura,

Imura

et al. 2021

Preprint

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Field-effect transistors made of wide-bandgap semiconductors can handle high electric power in a small space and have been of increasing importance in power and highfrequency electronics. An obstacle to advancing the field is the poor performance of hole-based p-channel transistors compared with that of their electron-based nchannel counterparts. This problem stems from the low mobility of holes, and it has constrained the production of energy-efficient complimentary circuits with integrated n-and p-channel transistors. The present paper reports fabrication of a p-channel wide-bandgap transistor with an exceptionally high hole mobility of 680 cm 2 V −1 s −1 , consisting of a hydrogen-terminated diamond channel and hexagonal boron nitride (h-BN) gate insulator. A high-quality h-BN/diamond heterostructure, with a reduced density of acceptor states near the diamond surface, suppresses hole scattering and thereby enables the device to have the highest mobility, lowest sheet resistance (1.4 kΩ), and largest on-current (1800 µm mA mm −1 ) among p-channel wide-bandgap transistors. Importantly, the transistor also shows normally-off behavior, with a high on/off ratio exceeding 10 8 . These characteristics are all desirable for switching high powers with low losses. This study opens a pathway to the development of highmobility p-channel wide-bandgap transistors with great potential for compact, fast, and energy-efficient electronic devices.

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supporting

confidence: 50%

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

Sasama,

Kageura,

Imura

et al. 2021

Preprint

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“…The same issues are also expected to arise if the polarity of the films are flipped, and a 2DEG is generated at the GaN/AlN interface on N-polar AlN buffer layer. With the rising relevance of AlN as the platform for UV photonics and future RF electronics 8,28 , significant interest exists in using 2DEGs and 2DHGs on AlN to make RF p-channel 7,29 and n-channel transistors 30,31 and enable wide-bandgap RF CMOS type devices. Combining the results of this work with recent advancements in homoepitaxial growths of AlN 32,33 should enable fundamental scientific studies of 2DEGs and 2DHGs in such polar heterostructures and simultaneously enable significant technological advances.…”

Section: Discussionmentioning

confidence: 99%

“…Using GaN/AlN 2DHGs as the channel, scaled GaN p-channel heterostructure field effect transistors (p-HFETs) with record high on-currents exceeding 400 mA/mm were reported recently 7 which, for the first time, broke the GHz speed barrier with cut-off frequencies in the 20 GHz regime. With key p-channel FET device parameters making a climb towards that of GaN n-channel HEMTs, this result represents a significant step towards enabling high-voltage RF wide-bandgap complementary device platforms 8 . The high polarization-induced 2DHG densities are crucial for achieving low contact and access resistances and the resulting high on-currents in these p-HFETs.…”

Section: Introductionmentioning

confidence: 99%

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Chaudhuri,

Chen,

Muller

et al. 2021

Preprint

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High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over ∆p s > 7 × 10 13 cm −2 , and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to ∆p s ≤ 1 × 10 13 cm −2 across growths, and a 3× boost in the Hall mobilities. These changes result in a 2-3× increase in hole conductivity when compared to GaN/AlN structures without IBLs.

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“…The fabricated transistor exhibits an on-current density of 428 mA/mm and a cut-off frequency of 20 GHz. A wide-bandgap CMOS platform formed using these fabricated p-channel HFETs along with excellent performance n-channel HFETs [121] was expected to achieve a new domain in the RF and power electronics applications [122].…”

Section: Gan-based Cmos Technologymentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Cited by 90 publications

References 132 publications

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

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