Prospective and issues for GaN microwave electronics into space satellites

Cazaux, J.-L.; Forestier, S.; Villemazet, J.F.; Vendier, O.; Schaffauser, C.; Drevon, C.; Muraro, Jean-Luc

doi:10.1109/apmc.2006.4429584

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…Due to the wide and direct bandgap nature of the material, there are vast applications for GaN-based devices such as high-power, 1 high-frequency, 2 photonic devices, 3 and more. 4 The optimization of several aspects in the MISHFETs structure has been intensely studied within the recent years. A major topic of interest is the insulator quality on nitrides.…”

Section: Introductionmentioning

confidence: 99%

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

Colon

Stan

Divan

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO 2 and Al 2 O 3 using different ratios of ALD cycles. TiO 2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO 2. The gate leakage current density decreases with increasing Al content, being $2-3 orders of magnitude lower for a TiO 2 :Al 2 O 3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO 2 and decreases with increasing the number of Al 2 O 3 cycles, it is maintaining a relatively high value compared to an Al 2 O 3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-j properties of TiO 2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices. V

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Section: Introductionmentioning

confidence: 99%

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

Colon

Stan

Divan

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The availability of LNAs highly robust toward interferer/blocking or leakage input signals allows considering alternative budget sizing and technology solutions for the entire communication system. Recent advantages in AlGaN/GaN HEMT processes have clearly demonstrated the valuable characteristics of this technology for receiver as well as for transmitter applications . Besides their attractive power features, AlGaN/GaN HEMTs are very promising for applications requiring low noise, high linearity, and survivability .…”

Section: Introductionmentioning

confidence: 99%

GaN Ku‐band low‐noise amplifier design including RF life test

D'Angelo¹,

Nalli

Resca³

et al. 2015

Int J Numerical Modelling

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As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low-noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku-band monolithic microwave integrated circuit low-noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25-μm HEMT on silicon carbide process. In the frequency band 12.75-14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small-signal and noise measurements has been developed to improve the predictions of the foundry model on source-degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low-noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power. Figure 9. Y-parameters (real and imaginary parts) of a 8 × 50-μm GaN HEMT. The extracted model (lines) and the FW-EM simulations (symbol) are in good agreement even far beyond the extraction frequency range. GaN Ku-BAND LOW-NOISE AMPLIFIER DESIGN INCLUDING RF LIFE TEST 725SOA of up to 15 dBm of input power. These results appear to be very promising in view of the targeted LNA robustness required for next generation payloads.

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