GaN Ku‐band low‐noise amplifier design including RF life test

Abstract

As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low-noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku-band monolithic microwave integrated circuit low-noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25-μm HEMT on silicon carbide process. In the frequency band 12.75-14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small-signal and noise measurements has been developed to improve the predictions of the foundry model on source-degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low-noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power. Figure 9. Y-parameters (real and imaginary parts) of a 8 × 50-μm GaN HEMT. The extracted model (lines) and the FW-EM simulations (symbol) are in good agreement even far beyond the extraction frequency range. GaN Ku-BAND LOW-NOISE AMPLIFIER DESIGN INCLUDING RF LIFE TEST 725SOA of up to 15 dBm of input power. These results appear to be very promising in view of the targeted LNA robustness required for next generation payloads.

A novel approach for the modeling of HEMT high power device

“…The outputs as well as the nth-order derivatives can be predicted based on the given inputs by using the improved SVR algorithm recently. The progress of the algorithm is depicted in Figure 2 As shown in Figure 3, a typical equivalent circuit of GaN HEMT device contains parasitic parameters and linear elements extracted from small signal equivalent circuit model (SSECM) and nonlinear equivalent elements calculated based on measurements and numerical algorithm [6,7].…”

“…As shown in Figure , a typical equivalent circuit of GaN HEMT device contains parasitic parameters and linear elements extracted from small signal equivalent circuit model (SSECM) and nonlinear equivalent elements calculated based on measurements and numerical algorithm .…”