A novel approach for the modeling of HEMT high power device

Abstract

Current characteristic has not been detailed, analyzed, and modeled in conventional High-electron-mobility transistor field-effect transistor model, which is not accuracy enough because the current has different variation rules under different gate voltages. A novel approach for the modeling of high-electron-mobility transistor high power amplifier is proposed in this paper. In order to obtain a more accuracy nonlinear model, drain current database are divided into three different regions, including the high gate bias region, the middle gate bias region, and the approximate pinch-off regions. The three nonlinear current regions are modeled separately and implemented in final high-electron-mobility transistor field-effect transistor model based on support vector regression algorithm. The proposed model is validated with high accuracy by comparing the simulated data with the tested data of a high power gallium nitride high-electron-mobility transistor amplifier, which the modeling is based on fewer samples compared with conventional methods based on the integrated current model. Figure 4. The support vector regression (SVR)-based nonlinear modeling flow chart (a) and I ds predicted process of the discrete method (b) (T 1 and T 2 are the decision threshold).6 of 11 L. SANG ET AL.

Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits

“…With the aim of ensuring a comprehensive treatment of the topic, different modeling techniques are addressed. In particular, physics‐based numerical models that provide a clear understanding of the most essential physical mechanisms that govern a device's operation, and compact models (eg, equivalent‐circuit and behavioral descriptions) that permit the cost‐effective design of advanced microwave circuits under nonlinear and linear operation, receive significant attention. Without a doubt, this special issue demonstrates the fundamental and unique role GaN transistor modeling plays in the conceptual development and design of new communication systems.…”