1961
DOI: 10.1007/bf02725963
|View full text |Cite
|
Sign up to set email alerts
|

Proprietà di superficie nei semiconduttori

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1962
1962
1993
1993

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 29 publications
0
1
0
Order By: Relevance
“…This expression was successfully applied when studying common polar substances [S]. Frova [39], specifically for ferroelectrics, suggested the relation used when studying BaTiO, [3], KTaO, [39], NaNbO, [28], and SbSI [34]. Here It will be seen that only those theoretical curves where o( T) is approximated by (4)…”
Section: Shape Of Absorption Edge In Polar Semiconductors and Dielectmentioning
confidence: 99%
“…This expression was successfully applied when studying common polar substances [S]. Frova [39], specifically for ferroelectrics, suggested the relation used when studying BaTiO, [3], KTaO, [39], NaNbO, [28], and SbSI [34]. Here It will be seen that only those theoretical curves where o( T) is approximated by (4)…”
Section: Shape Of Absorption Edge In Polar Semiconductors and Dielectmentioning
confidence: 99%