Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Kevin J.

doi:10.1109/ted.2016.2557811

Cited by 56 publications

(21 citation statements)

References 13 publications

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“…As shown in Figure 13, with increases in N s , V th decreases due to decreases in the height of the electron barrier at the GaN/AlGaN interface. The inset in Figure 12 shows transfer characteristic curves as a function of N s at Figure 14 shows the R on,sp and BV values of the proposed devices and for the recently reported AlGaN/GaN HEMTs, together with the theoretical Si-, SiC-, and GaN-limits [3,8,21,[23][24][25]. We can see that the TG-MC-HEMT has a higher figure of merit (FOM = BV 2 /R on,sp ).…”

Section: Resultsmentioning

confidence: 91%

“…In our simulations, the HfO 2 thickness is 10 nm, the repetitive AlN/GaN hetero-unit thickness is 2 nm/20 nm, the GaN/Al 0.26 Ga 0.74 N thickness is 15 nm/17 nm, the source length (L s ) is 0.5 µm, the drain length (L d ) is 1 µm, and the gate-drain distance (L gd ) is 5.5 µm. We assumed an electron mobility of 1500 cm 2 /(V•s) at the AlN/GaN hetero-interface and 300 cm 2 /(V•s) at the MIS interface in the gate region [21]. The doping concentration of the N + region is 1×10 20 cm −3 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

Yang

Luo

Deng

et al. 2017

Sci. China Inf. Sci.

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Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT Science in China Series E-Technological Sciences 51, 784 (2008); Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers SCIENCE CHINA Information Sciences 62, 062403 (2019); Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer SCIENCE CHINA Information Sciences 59, 042410 (2016); A power manager system with 78% efficiency for high-voltage triboelectric nanogenerators SCIENCE CHINA Information Sciences 60, 029401 (2017); A power manager system with 78% efficiency for high-voltage triboelectric nanogenerators SCIENCE CHINA Information Sciences SCIENCE CHINA Information Sciences

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Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

Yang

Luo

Deng

et al. 2017

Sci. China Inf. Sci.

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“…The SiC JBS diode is adopted in this work as a case study. SiC power devices have attracted worldwide attention because of the high critical breakdown field in SiC [18]-for example, SiC MOSFET with protruded p-base [19], split-gate SiC MOSFET [20], SiC diodes [21], and GaN/SiC hybrid field-effect transistors [22]. In this work, we present that the contact to the p-grid exerts little influence on the static characteristics of the SiC JBS diode, including the forward voltage drop (V F ) and the BV.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Hua

Wei

2020

Electronics

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P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

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“…The net acceptor (deep level) density in the buffer layer is set to be 1.5×10 16 cm −3 and the energy level is 0.45 eV below the conduction band minimum [29]. The electron mobility at the AlGaN/GaN buffer layer heterointerface is assumed to be 925 cm 2 /(V•s) for the BGA-HFET and PolFET [19], while 1500 cm 2 /(V•s) for the Con-HFET, and 300 cm 2 /(V•s) at the MIS trench gate interface for the three devices [30].…”

Section: Introductionmentioning

confidence: 99%

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

Yang

Deng

et al. 2019

Sci. China Inf. Sci.

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A novel three-dimensional hole gas (3DHG) enhancement-mode (E-mode) heterostructure fieldeffect transistor (HFET) is proposed and investigated. It features back-to-back graded AlGaN (BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas (3DEG) and 3DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor (MIS) trench gate, and the source is in contact with the HfO 2 gate insulator. First, the on-state current is significantly improved owing to the high-density 3DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3DEG is blocked by the 3DHG, thereby realizing the E-mode. The threshold voltage (V th) can be modulated by a partial doping conductive channel. Subsequently, a high breakdown voltage (BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the off-state. Next, the BGA-HFET is smaller than the conventional HFET (Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

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Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Cited by 56 publications

References 13 publications

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

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