Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes

Chaitra, U.; Ali, Anwar; Mahesha, M.G.; Kompa, Akshayakumar; Kekuda, Dhananjaya; Rao, K. Mohan

doi:10.1016/j.spmi.2021.106903

Cited by 21 publications

(8 citation statements)

References 35 publications

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“…Deviations from ideality can be attributed to the specific current conduction mechanism under consideration. The TE model, which solely considers the thermionic emission mechanism while disregarding tunneling, recombination processes, as well as the series resistance at the metal–semiconductor junction, results in a higher ideality factor . Consequently, since defect states concentrated within grain boundaries act as charge traps, the n factor for the GB is slightly higher than that for grain faces.…”

Section: Resultsmentioning

confidence: 99%

“…In the literature, E u values typically fall within the range of 0.1−0.4 eV. 46,47 Higher E u values suggest a higher degree of lattice disorder and a more significant contribution of defects in the localized states within the optical gap.…”

Section: Structural and Optical Properties Figure 2amentioning

confidence: 99%

“…The TE model, which solely considers the thermionic emission mechanism while disregarding tunneling, recombination processes, as well as the series resistance at the metal−semiconductor junction, results in a higher ideality factor. 46 Consequently, since defect states concentrated within grain boundaries act as charge traps, the n factor for the GB is slightly higher than that for grain faces. The calculation of ΔΦ between the grain and GB was carried out by using the mean value of n as 3.60 ± 0.2.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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Influence of Grain Boundaries on Nanoscale Charge Transport Properties of Transparent Conductive ZnO-Based Electrodes

Moreira,

dos Santos,

Salomão

et al. 2023

ACS Appl. Electron. Mater.

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The presence of defect states, such as grain boundaries (GBs), can interfere with the charge transport properties of various semiconductor oxides. In this research, electrostatic force microscopy (EFM) and conducting atomic force microscopy (c-AFM) techniques were used to explore the nanoscale surface electrical properties of zinc oxide (ZnO) thin films deposited on a conductive fluorine-doped tin oxide (FTO) substrate. Films like these are often used as anode materials in photovoltaic and other optoelectronic devices. EFM measurements revealed the presence of charge trapping within the grain boundary region, suggesting localized band-bending effects. Furthermore, a current map obtained through c-AFM indicated that the grain regions exhibited higher conductivity, validating the observations made with EFM. By combination of c-AFM and Kelvin probe force microscopy (KPFM), it was possible to obtain experimental confirmation of band bending at grain boundaries. Data extracted from current−voltage (I−V) curves allowed the quantification of local saturation currents of 1.29 and 0.75 nA at the grain and GB. It was also possible to calculate the difference in potential barrier height between grain and GB as 50.40 meV. Urbach energy calculations identified the existence of defect states within the band gap. These defect states shifted the Fermi level toward the conduction band, reducing the local work functions to 3.93 and 3.89 eV for the grain and GB. These findings align with the thermionic emission (TE) model and Schottky−Mott theory, contributing to a deeper understanding of nanoscale charge transport within ZnO-based anodes and paving the way for the development of transparent conductive oxide-based optoelectronic devices and other applications.

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Section: Resultsmentioning

confidence: 99%

Section: Structural and Optical Properties Figure 2amentioning

confidence: 99%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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Influence of Grain Boundaries on Nanoscale Charge Transport Properties of Transparent Conductive ZnO-Based Electrodes

Moreira,

dos Santos,

Salomão

et al. 2023

ACS Appl. Electron. Mater.

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“…[24] Sol-gel synthesis is one of these grown depositions' thin-film techniques that have the advantages of low deposition temperature and costeffective deposition. [25,26] Many works have described AZO sol-gel deposited on glass substrates [27][28][29][30] [ [1][2][3][4], ITO [31] [5], and FTO, [32] but few works have described Al-doped ZnO sol-gel deposited on silicon substrates by spin coating. However, special attention has been paid to the moderate Al contents.…”

Section: Introductionmentioning

confidence: 99%

CMOS Compatible Al‐Doped ZnO Sol–Gel Thin‐Film Properties

Moussa

Lajnef

Jebari

et al. 2022

Physica Status Solidi (a)

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“…Zinc oxide (ZnO) is the most popular material due to its unique properties like high optical transmittance, good transparency, high refractive index, high absorbance, high conductivity, high electron mobility, wide band gap and large exciton binding energy. [6][7][8][9][10] For this reason, it has attracted great attention in electronic and optoelectronic applications such as such as field effect transistors, capacitors, transistors, solar cells, sensors, photodetectors and light emitting diodes. Various techniques like magnetron sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), spray pyrolysis and sol-gel spin coating have been used to deposit ZnO film on substrate.…”

mentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes

Cited by 21 publications

References 35 publications

Influence of Grain Boundaries on Nanoscale Charge Transport Properties of Transparent Conductive ZnO-Based Electrodes

Influence of Grain Boundaries on Nanoscale Charge Transport Properties of Transparent Conductive ZnO-Based Electrodes

CMOS Compatible Al‐Doped ZnO Sol–Gel Thin‐Film Properties

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

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