Properties of Zn-doped GaN. I. Photoluminescence

Pánkové, J. I.; Berkeyheiser, J. E.; Miller, Edward

doi:10.1063/1.1663402

Cited by 112 publications

(49 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity increases with x from 10 312cm (x = 0) to 10 ~cm (x = 0.6), which is a rather low resistivity and seems to be in contradiction to the fact that A1N grown by the same method is known to be insulating (18). Similar to the case of GaN (19), the carriers are probably due to nitrogen vacancies that originate from a high equilibrium pressure of nitrogen. These results indicate that the electrical properties of AlxGal_xN grown by atmospheric pressure MOVPE are superior to those of AlxGa,_xN grown by MBE and LPMOVPE.…”

Section: J Electrochem Soc: S O L I D -S T a T E S C I E N C E A Nmentioning

confidence: 94%

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Koide

Itoh

Sawaki

et al. 1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

Epitaxial layers of AI~Ga~_.~N alloys are grown on sapphire (0001) and silicon (111) substrates by MOVPE in an ambient H2 gas at atmospheric pressure. By optimizing the reactor design and the growth conditions, parasitic reactions of metalorganic compounds with gaseous NH3 are remarkably reduced and the composition of AI~Ga~_~N layers can be controlled fairly well for the first time. The vapor-solid distribution coefficient for A1 is found to be approximately unity. At respective substrate temperatures of 1020~ for sapphire and 1050~ for silicon, single-crystal layers of AI~Ga~_~N with x up to 0.40 are obtained. The lattice constant is proportional to the molar fraction of A1N following Vegard's law. The electrical resistivity, carrier concentration, and Hall mobility of the layers are studied as a function of the composition.GaN and A1N have attracted much interest as the materials for optical devices in the short wavelength region, because they have direct energy bandgap of 3.4 (1) and 6.2 eV (2) at room temperature, respectively. For such device applications, single crystals with desired electrical properties are required. However, it has been fairly difficult to control their electrical Properties such as the type of conduction and the conductivity. As-grown GaN is usually an n-type material with relatively low resistivity, while A1N is always insulating. It is interesting to study, therefore, the growth of their alloy At~Ga~_xN single crystals and the properties of this alloy, because both GaN and AIN have a wurtzite structure. Although few reports of the growth of this alloy have appeared during the last several years, all of these reports have shown that the control of composition of the alloy is yet to be achieved for single crystals with good electrical properties.The growth of AI~GaI_~N layers by hydride vaporphase epitaxy (HVPE) was reported by Hagen et al. AI~.Gal_~N layers grown by MBE under high vacuum conditions are inferior to those grown by HVPE at atmospheric pressure (4) and metalorganic vapor-phase epitaxy (MOVPE) (7). This is probably due to the high equilibrium pressure of nitrogen over the alloy at typical growth temperatures resulting in high density of nitrogen vacancies, which may behave as electron donors. Furthermore, the lattice constant was not proportional to the molar fraction of A1N, suggesting the presence of some kinds of lattice defect. MOVPE has proven its suitability for the epitaxial growth of GaN of good quality (8), but very few works have been reported on this AlxGa~_~N alloy. Recently, Khan et al. (7) reported:the electrical and optical properties of AI~Gal_xN singlecrystal layers over the whole range of the composition prepared by using the low pressure MOVPE. However, no investigations of the controllability of the composition and the composition dependence of lattice constant were reported. In this paper, we report the epitaxial growth of AI~Gal_xN layers on sapphire and silicon substrates by MOVPE at atmospheric pressure and the achievement of good control o...

show abstract

Section: J Electrochem Soc: S O L I D -S T a T E S C I E N C E A Nmentioning

confidence: 94%

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Koide

Itoh

Sawaki

et al. 1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…With respect to the p-side, such assumption cannot be easily made, as Mg acceptors introduce rather deep levels (-l80 meV above the valence-band edge). The maximum hole density in p-GaN is usually estimated to be only (3)(4)(5)(6)(7)x iO'7 cm3, which is much less than the effective valence-band density of states. However, it has been also established that low-temperature resistivity does not strongly freeze-out either in n-GaN'° or inp-InGaN", approaching some "floor" value.…”

Section: Diode Structure and Electrical Propertiesmentioning

confidence: 99%

Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure

Eliseev¹,

Smagley²,

Perlin³

et al. 1996

SPIE Proceedings

View full text Add to dashboard Cite

GaNIIn0.05Ga5N/A10.15Ga.85N double heterostructures doped with Zn and Si, used in Nichia LEDs, are investigated. Electrical, electroluminescent and photoluminescent properties are presented and discussed. Blue photoluminescence (PL) is analyzed to obtain optical transition parameters (phonon coupling strength and zero-phonon line position) involved in formation of the impurityrelated emission band. With a minor modification ofparameters for Zn centers in GaN, a satisfactory fit is achieved for PL spectra.

show abstract

“…Both groups concluded that this peak corresponds to Zn Ga single acceptor center. Pankove and Berkeyheiser [21,22] observed that Zn, present in sufficient concentrations, favors the substitutional replacements of N vacancies. Starting with these observations, we considered the zinc at both gallium and nitrogen sites.…”

Section: Zinc Substitutional In Gan Swntmentioning

confidence: 99%

An ab initio Study of a Model of Single Wall GaN Nanotubes with Oxygen and Zinc as Impurities: Structural and Electronic Properties

Rezouali

Belkhir

2008

Acta Phys. Pol. A

View full text Add to dashboard Cite

We report a comprehensive theoretical study of structural and electronic properties of substitutional oxygen and zinc contaminations in a model of single wall GaN nanotubes by means of ab initio supercell calculations. Our investigation yields many interesting results. The following ones deserve to be developed. Oxygen forms a shallow donor in the single wall GaN nanotubes as in bulk GaN polytypes. Its ionization energy is deeper than its counterpart in the bulk wurtzite GaN, so it can be a suitable n-type dopant in high temperature applications. Zinc is a relatively shallow acceptor at gallium site. It behaves as charge carrier trap at nitrogen site. The site preference of zinc impurity depends on the stoichiometry. Zinc at gallium site has small ionization energy, thus it would be an efficient p-dopant in GaN nanotubes unlike in bulk GaN polytypes.

show abstract

Properties of Zn-doped GaN. I. Photoluminescence

Cited by 112 publications

References 15 publications

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure

An ab initio Study of a Model of Single Wall GaN Nanotubes with Oxygen and Zinc as Impurities: Structural and Electronic Properties

Contact Info

Product

Resources

About