Properties of zinc sulfur selenide deposited using a close-spaced sublimation method

Armstrong, Steven; Datta, P.K.; Miles, Robert

doi:10.1016/s0040-6090(01)01521-8

Cited by 43 publications

(18 citation statements)

References 3 publications

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“…The properties of the material can be tuned between the respective properties of the two end binary compounds, i.e., ZnSe and ZnS, simply by controlling the composition of the alloy. [6][7][8] This can be achieved by most thin film deposition processes such as pyrolitic spray deposition, 6 close-spaced sublimation, 7 plasma-induced isoelectric substitution, 8 metal organic vapour phase epitaxy (MOVPE), 9 atomic layer epitaxy (ALE), 10 etc. The material, in addition to being very promising for many electronic applications, also possesses interesting optical and vibrational behaviors.…”

Section: Introductionmentioning

confidence: 99%

“…Though the band structure of ZnS x Se 1Àx has not been well understood, the band gap of these alloys is experimentally observed to vary with alloy composition. [6][7][8] Study of the dependence of SO splitting on the fraction of sulfur content in the alloy will give a better understanding of the material property and may also help in implementing the material for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

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Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnS x Se1−x Ternary Alloys Films with Varying Se Concentration

Lalhriatzuala

Agarwal

2015

Journal of Elec Materi

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ZnS x Se 1Àx (x = 0, 0.41, 0.51, 0.91, 1) ternary alloy thin films with variable structural, optical and vibrational properties were prepared by thermal evaporation of solvothermally synthesized ZnS-ZnSe nanocomposite powders. The deposited films were uniform and have zinc-blende structure with (111) orientation. Variation of lattice parameter with composition was slightly nonlinear with a bowing parameter of 0.12 Å . Spin orbit (SO) splitting of the valence band was observed in binary ZnSe and ternary samples with large Se atomic concentration such as ZnS 0.41 Se 0.59 and ZnS 0.51 Se 0.49 . The SO splitting energy decreases as the Se atomic concentration in the alloy decreases. Two phonon modes (corresponding to ZnS and ZnSe bonds) behavior were observed in the Raman spectra of the ternary alloys. The observed phonon mode frequencies shifted with changes in Se atomic concentration in agreement with theroretical predictions. Gap mode vibration of Se in ZnS lattice was also observed at 221 cm À1 in the ternary sample with small Se atomic concentration (ZnS 0.91 Se 0.09 ), which also matches closely with theoretically calculated values.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnS x Se1−x Ternary Alloys Films with Varying Se Concentration

Lalhriatzuala

Agarwal

2015

Journal of Elec Materi

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“…Hence, we would expect Se incorporation into the crystal ARTICLE IN PRESS lattice during annealing under Se atmosphere and caused a change in lattice parameter. The composition of the crystal corresponds to lattice parameter was compared with the literature [11]. The results are presented in Table 1.…”

Section: Heat Treatment and Structural Analysismentioning

confidence: 99%

Effect of heat treatment and Si ion irradiation on ZnSxSe1−x single crystals grown by CVT method

Kumar

Soundeswaran

Kabiraj

et al. 2005

Journal of Crystal Growth

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“…ZnSe is one of the potential members of II-VI compound semiconductors and widely used in optoelectronic devices owing to its wide transmission range and high optical quality. [1][2][3][4][5][6][7] ZnSe thin films are also used as a buffer layer and window layer 8,9 in the fabrication of solar cells. Furthermore, they yields high quantum efficiency in the visible region due to the high absorption coefficient.…”

Section: Introductionmentioning

confidence: 99%

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

Arslan

Zakria

Naz

et al. 2015

Journal of Elec Materi

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Thin films of Cu x Zn 1Àx Se (0 £ x £ 0.20) have been prepared on glass substrates at room temperature by closed space sublimation. The effect of copper (Cu) concentration on the structural, optical and electrical properties of the prepared films has been investigated using x-ray diffraction (XRD), Raman spectroscopy (RS), spectrophotometery and Hall effect measurements. XRD spectra show that all the films are cubic with (111) preferred orientation. The lattice constants, crystallite size, strain, and dislocation density were calculated from the XRD spectra. The structural analysis shows that crystallite size and crystallinity increase while strain and dislocation density decrease up to 10% Cu addition. However, an opposite trend has been observed beyond 10% Cu concentration. RS was carried out to investigate different phonon bands and crystalline phases. The strong reflection corresponding to the (111) texture in the XRD and the observed longitudinal optical (LO) phonon bands at 251 cm À1 and 497 cm À1 in the Raman spectra reveal the formation of single phase zinc-blende structure. The band gap energy decreases from 2.67 eV to 2.24 eV as the Cu concentration is increased from 0% to 20%. Hall effect measurements shows that electrical resistivity (q) is decreased by about three orders of magnitude from 10.4 9 10 À03 X-cm to 47.9 9 10 À03 X-cm while, carrier concentration and mobility (l) is increased with Cu addition.

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Properties of zinc sulfur selenide deposited using a close-spaced sublimation method

Cited by 43 publications

References 3 publications

Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnS x Se1−x Ternary Alloys Films with Varying Se Concentration

Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnS x Se1−x Ternary Alloys Films with Varying Se Concentration

Effect of heat treatment and Si ion irradiation on ZnSxSe1−x single crystals grown by CVT method

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

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