Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Guillet, Bruno; Arthursson, Ö.; Méchin, Laurence; Metzner, M.-N.; Chauvat, Marie-Pierre; Ruterana, P.; Drakinskiy, Vladimir; Cherednichenko, Serguei; Lefèvre, R.; Delorme, Y.; Krieg, Jean-Michel

doi:10.1007/s10909-007-9694-1

Cited by 9 publications

(5 citation statements)

References 17 publications

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“…However, the lattice mismatch between NbN and Si is more serious compared to that between MgO and Al 2 O 3 , and subsequently the superconducting characteristics of the NbN films on Si substrate [18,19] are more degraded, which directly reduces the device's performance. Substrate heating [1,18,19] and a variety of buffer layers such as MgO [15,20], Si 3 N 4 [20], 3C-SiC [21,22], AlN [23], TiN [24] on silicon substrates have been used to improve the quality of the NbN films. 3C-SiC buffered Si substrate allows for epitaxial growth of the NbN films, resulting in a monocrystalline structure and an approx.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Jia

Lee

et al. 2014

Supercond. Sci. Technol.

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Lattice mismatch between NbN and silicon (Si) reduces the superconducting properties of NbN film on Si substrate, and this in turn affects the performance of devices such as the hot electron bolometer (HEB) and superconducting nanowire single photon detector (SNSPD). We have found that the superconducting properties of NbN film on Si will be significantly improved by a Nb 5 N 6 buffer layer. The strain of the NbN film was optimized by varying the thickness of the buffer layer. With 30 nm thick Nb 5 N 6 , the zero resistance superconducting transition temperature (T C0 ) of a 6 nm thick NbN film on Si is up to 13.5 K and the critical current density (J C ) of the film is more than 10 7 A cm −2 . All the details of preparation, improvement and characteristics of this film are also presented.

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Section: Introductionmentioning

confidence: 99%

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Jia

Lee

et al. 2014

Supercond. Sci. Technol.

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“…Increased efficiency of terahertz detection is achieved by thermal isolation of HEBs by depositing NbN films on air bridges formed by thin membrane of Si 3 N 4 , 9 to improve the quality of these films alternative materials for buffer layer are being explored. 10 Recently there are attempts to transfer the SSPD fabricated on SiN x membranes to photonic structures on a secondary chip. 11 On-chip graphenebased photo-detectors are another area of research due to simpler CMOS-compatible fabrication techniques.…”

mentioning

confidence: 99%

Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

Saraswat¹,

Pc²,

Bhattacharya³

et al. 2014

APL Materials

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NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111) films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

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“…Thus, a small temperature modulation creates a large resistance modulation, thereby leading to the excellent sensitivities of the superconducting HEB mixers. The transition temperature of a thin-lm superconductor depends on many parameters, including the transition temperature of the bulk superconductor, lm thickness, fabrication quality, and superconductor-substrate interface [77]. Some superconductors commonly used in HEB mixers are NbN [78][79][80][81], NbTiN [82][83][84] and Nb [85].…”

Section: Hot Electron Bolometer Mixersmentioning

confidence: 99%

Heterodyne terahertz detection through electronic and optoelectronic mixers

Lin

Jarrahi

2020

Rep. Prog. Phys.

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The high sensitivity detection of terahertz radiation is crucial for many chemical sensing, biomedical imaging, security screening, nondestructive quality control, high-data-rate communication, atmospheric, and astrophysics sensing applications. Among various terahertz detection techniques, heterodyne detection is of great interest for applications that require high spectral resolution. Heterodyne detection involves mixing the received terahertz radiation with a reference terahertz signal provided by a local oscillator and then down-converting it to an intermediate frequency for detection. The frequency of the intermediate frequency signal is usually chosen to be in the radio frequency regime, so that it can be accurately analyzed by well-developed radio frequency electronics, including ampli ers, lters, and spectrometers, for further processing. Heterodyne terahertz detection offers two major advantages over direct terahertz detection. First, the detected terahertz radiation is effectively enhanced by the reference local oscillator signal through the mixing process, thereby enabling the detection of very weak terahertz signals. Second, the detected noise power is effectively reduced by limiting the detected spectral bandwidth to the bandwidth of the intermediate frequency electronics. In this article, we present a broad overview of various types of heterodyne terahertz receivers, which utilize different electronic and optoelectronic techniques to down-convert the received terahertz signal to a radio frequency signal. We describe how the inherent nonlinearity of a Schottky diode, superconductor-insulator-superconductor junction, hot electron bolometer, and eld-effect transistor can be utilized to mix the received terahertz radiation with a reference local oscillator signal from a gas laser, quantum cascade laser, photomixer, Gunn diode, IMPATT diode, and frequency multiplier and then down-convert it to a radio frequency signal. The down-converted radio frequency signal can be subsequently detected and analyzed by various backend spectrometers, including lter bank, acousto-optical, autocorrelator, fast Fourier transform, and chirp transform spectrometers. We also discuss how a photomixer pumped by a heterodyning optical beam can be used to down-convert the received terahertz radiation to a radio frequency signal with far fewer bandwidth constraints than conventional techniques. The advantages and disadvantages of different heterodyne receivers in terms of their noise performance, operation frequency, operation bandwidth, and operation temperature are discussed in detail.

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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Cited by 9 publications

References 17 publications

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

Heterodyne terahertz detection through electronic and optoelectronic mixers

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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Cited by 9 publications

References 17 publications

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6buffer layer on Si substrate

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6buffer layer on Si substrate

Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

Heterodyne terahertz detection through electronic and optoelectronic mixers

Contact Info

Product

Resources

About

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate