Fabrication of a strain-induced high performance NbN ultrathin film by a Nb<sub>5</sub>N<sub>6</sub>buffer layer on Si substrate

Jia, Xiaoqing; Lee, Kang; Gu, Mingxia; Yang, X. Z.; Chen, C; Tu, Xuecou; Jin, B. B.; Xu, Weizong; Chen, J; Wu, Peiheng

doi:10.1088/0953-2048/27/3/035010

Cited by 24 publications

(13 citation statements)

References 28 publications

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“…To prevent the ultrathin Mo 0.8 Si 0.2 film from oxidation and alkalinity in the subsequent process, a 7 nm-thick Nb 5 N 6 film as a protective layer is subsequently grown on the Mo 0.8 Si 0.2 film in situ, which is an insulator [50] and thus will not affect the superconducting properties of the Mo 0.8 Si 0.2 film at low temperature. Figure 3(a) reveals that the Mo 0.8 Si 0.2 film has no large crystalline domain.…”

Section: Resultsmentioning

confidence: 99%

All-fiber device for single-photon detection

et al. 2023

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Fiber components form the standard not only in modern telecommunication but also for future quantum information technology. For high-performance single-photon detection, superconducting nanowire single-photon detectors (SPDs) are typically fabricated on a silicon chip and fiber-coupled for easy handling and usage. The fiber-to-chip interface hinders the SPD from being an all-fiber device for full utilization of its excellent performance. Here, we report a scheme of SPD that is directly fabricated on the fiber tip. A bury-and-planar fabrication technique is developed to improve the roughness of the substrate for all-fiber detectors’ performance for single-photon detection with amorphous molybdenum silicide (MoSi) nanowires. The low material selectivity and universal planar process enable fabrication and packaging on a large scale. Such a detector responds to a broad wavelength range from 405 nm to 1550 nm at a dark count rate of 100 cps. The relaxation time of the response pulse is ~ 15 ns, which is comparable to that of on-chip SPDs. Therefore, this device is free from fiber-to-chip coupling and easy packaging for all-fiber quantum information systems.

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Section: Resultsmentioning

confidence: 99%

All-fiber device for single-photon detection

et al. 2023

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“…Superconducting nanofilms also presented a number of novel physical phenomena in recent researches, such as abnormal magnetoresistance, periodic oscillations of magnetoresistance, etc. These qualities make superconducting nanofilms an ideal material for making magnetron switches and magnetic field detectors [44][45][46].…”

Section: Superconducting Nanomaterialsmentioning

confidence: 99%

Progress of superconducting nanofibers via electrospinning

Long¹,

Cheng²,

Zhu³

et al. 2021

J. Phys.: Condens. Matter

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Superconducting nanofibers have attracted much attention in basic researches and practical applications due to their unique physical properties such as broad phase transition temperature, excellent heat conductivity, and high critical current density, etc. Electrospinning, as a common method to prepare nanofibers, also has many applications for the preparation of superconducting nanofibers. However, a few of the new methods to fabricate superconducting nanofibers via electrospinning still need further investigations. This review firstly introduces several potential electrospinning methods to obtain superconducting nanofibers, then proceeds to summarize the recent progress in the field of electrospun superconducting materials. The preparation process, difficulties and problems, physical properties of the superconducting nanofibers or nanonetworks (such as superconducting transition temperature, critical current density, critical magnetic field strength, fiber morphology, and structure, etc), theoretical analysis of the properties, and the techniques to improve the performance are also reviewed. In addition, some suggestions and prospects for the development and applications of electrospun superconducting materials in the future are discussed.

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“…This has led to the employment of lattice-matched buffer-layers such as MgO [10], 3C-SiC [11,12] and the recently reported hexagonal GaN [13], which have proven to dramatically improve the superconducting properties, particularly for ultra-thin films [14]. Additionally, introducing strain to the NbN film through a buffer-layer such as Nb 5 N 6 also showed to improve its properties [15]. The growth in a reactive argon/nitrogen atmosphere by means of DC magnetron sputtering usually requires high temperatures, achieved by heating the substrate to up to 950 °C in order to obtain the desired cubic δ-phase of NbN with T c of the bulk material of 16 K. The presence of a high temperature environment limits the overall complexity of the device remarkably and precludes for instance the integration of other circuitries containing thin insulating layers or intricate multilayer structures.…”

Section: Introductionmentioning

confidence: 99%

Ambient Temperature Growth of Mono- and Polycrystalline NbN Nanofilms and Their Surface and Composition Analysis

Krause

Desmaris

et al. 2016

IEEE Trans. Appl. Supercond.

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This paper presents the studies of high-quality 5 nm thin NbN films deposited by means of reactive DC magnetron sputtering at room temperature. The deposition without substrate heating offers major advantages from a processing point of view and motivates the extensive composition-and surface characterization and comparison of the present films with high quality films grown at elevated temperatures. Monocrystalline NbN films have been epitaxially grown onto hexagonal GaN buffer-layers (0002) and show a distinct, low defect interface as confirmed by High-Resolution TEM. The critical temperature T c of films on the GaN buffer-layer reached 10.4 K. Furthermore, a poly-crystalline structure was observed on films grown onto Si (100) substrates, exhibiting a T c of 8.1 K albeit a narrow transition from the normal to the superconducting state. X-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy verified that the composition of NbN was identical irrespectively of applied substrate heating. Moreover, the native oxide layer at the surface of NbN has been identified as NbO 2 and thus, is in contrast to the Nb 2 O 5 , usually claimed to be formed at the surface of Nb when exposed to air. These findings are of significance since it was proven the possibility of growing epitaxial NbN onto GaN buffer layer in the absence of high temperatures hence paving the way to employ NbN in more advanced fabrication processes involving a higher degree of complexity. The eased integration and employment of lift-off techniques could, in particular, lead to improved performance of cryogenic ultra-sensitive terahertz electronics.

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Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate

Cited by 24 publications

References 28 publications

All-fiber device for single-photon detection

All-fiber device for single-photon detection

Progress of superconducting nanofibers via electrospinning

Ambient Temperature Growth of Mono- and Polycrystalline NbN Nanofilms and Their Surface and Composition Analysis

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Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6buffer layer on Si substrate

Cited by 24 publications

References 28 publications

All-fiber device for single-photon detection

All-fiber device for single-photon detection

Progress of superconducting nanofibers via electrospinning

Ambient Temperature Growth of Mono- and Polycrystalline NbN Nanofilms and Their Surface and Composition Analysis

Contact Info

Product

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Fabrication of a strain-induced high performance NbN ultrathin film by a Nb₅N₆buffer layer on Si substrate