Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

Marcinkevičius, Saulius; Sztein, Alexander; Nakamura, Shuji; Speck, James S.

doi:10.1088/0268-1242/30/11/115017

“…This indicates that hole trapping at In can lead to a redshifted PL signal (relative to bandgap recombination), which may contribute to the broadness of InAlN spectra observed experimentally. [29][30][31]…”

Section: Indiummentioning

confidence: 99%

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Lyons

¹

,

Walle

²

2021

Physica Rapid Research Ltrs

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Hole localization is a root cause of difficulties in p-type doping of aluminum nitride. Herein, the stability of localized holes in AlN and their susceptibility to self-trapping within bulk material or in the presence of isovalent elements and acceptor impurities are calculated. It is found that self-trapped holes are metastable in bulk AlN, and also exhibit a very low barrier to detrapping. However, holes become trapped in the presence of acceptor impurities as well as isovalent elements such as B, In, and Sc, and may contribute to the broad luminescence observed in AlN alloys. It is also found that hole trapping contributes to the large ionization energies for acceptors in AlN. Most acceptors can also trap a second hole, becoming positively charged and further exacerbating difficulties in doping aluminum nitride p type. The stability of trapped holes is found to scale with atomic size mismatch to Al.

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“…Such localized states may have advantages 3 – 5 in obtaining high quantum efficiencies (QE). However, insufficient photoluminescence (PL) lifetimes ( ) at room temperature, which nearly represents the nonradiative lifetime ( ), shorter than 80 ps 23 , 29 , 33 indicates the difficulties in decreasing N NRC . Moreover, there have been limited publications 23 , 31 , 32 , 34 on an NBE emission of nonpolar-plane Al 1- x In x N, although (Al,In,Ga)N grown in off-polar orientations 36 , 37 are a promising candidate for opto- and electronic devices of ultimate performance: as summarized in Refs.…”

Section: Introductionmentioning

confidence: 99%

Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN

Chichibu

¹

,

Shima

²

,

Kojima

³

et al. 2020

Sci Rep

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Immiscible semiconductors are of premier importance since the source of lighting has been replaced by white light-emitting-diodes (LEDs) composed of thermodynamically immiscible InxGa1−xN blue LEDs and yellow phosphors. For realizing versatile deep-ultraviolet to near-infrared light-emitters, Al1−xInxN alloys are one of the desirable candidates. Here we exemplify the appearance and self-formation sequence of compositional superlattices in compressively strained m-plane Al1−xInxN films. On each terrace of atomically-flat m-plane GaN, In- and Al-species diffuse toward a monolayer (ML) step edge, and the first and second uppermost < $$\stackrel{-}{1}\stackrel{-}{1}20$$ 1 - 1 - 20 > cation-rows are preferentially occupied by Al and In atoms, respectively, because the configuration of one In-N and two Al-N bonds is more stable than that of one Al-N and two In-N bonds. Subsequent coverage by next < $$\stackrel{-}{1}\stackrel{-}{1}20$$ 1 - 1 - 20 > Al-row buries the < $$\stackrel{-}{1}\stackrel{-}{1}20$$ 1 - 1 - 20 > In-row, producing nearly Al0.5In0.5N cation-stripe ordering along [0001]-axis on GaN. At the second Al0.72In0.28N layer, this ordinality suddenly lessens but In-rich and In-poor < $$\stackrel{-}{1}\stackrel{-}{1}20$$ 1 - 1 - 20 >-rows are alternately formed, which grow into respective {0001}-planes. Simultaneously, approximately 5-nm-period Al0.70In0.30N/Al0.74In0.26N ordering is formed to mitigate the lattice mismatch along [0001], which grow into approximately 5-nm-period Al0.70In0.30N/Al0.74In0.26N {$$10\stackrel{-}{1}2$$ 10 1 - 2 } superlattices as step-flow growth progresses. Spatially resolved cathodoluminescence spectra identify the emissions from particular structures.

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“…Heterostructure field-effect transistors (hetero-FETs) based on Si-Ge [1][2][3] and III-V [4][5][6][7] compounds have been remarkably developed in recent decades. Despite the tremendous advancements in these conventional hetero-FETs, various studies had shown that the rough band edge of the explored semiconductors [8,9] in combination with trap states [10,11] at heterostructure interfaces, which was induced by strain [12][13][14] or lattice mismatch [15,16], limit the performance of the heterostructure devices. 2D atomic semiconductors with atomically thin layer, which consist of covalent or ionic inplane bonding with van der Waals interlayer interactions, have regulated interfaces and thereby sharp band edges [17].…”

Section: Introductionmentioning

confidence: 99%

WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment

Li

¹

,

Yan

²

,

Song

³

et al. 2017

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Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe/MoS hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe/SnSe heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.

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Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

Cited by 9 publications

References 27 publications

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN

WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment

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Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

Cited by 9 publications

References 27 publications

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN

WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment

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WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment