Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors

Abstract

In this paper, we report on thin film transistors based on gas phase synthesized ZnO nanoparticles using low temperature deposited silicon dioxide and silicon nitride as gate dielectrica. For bottom gate transistors, the devices using silicon nitride as gate insulator show the lowest off-current for a given induced charge and the steepest subthreshold slope. The charge carrier mobility of around 3x10-3 cm2/Vs and an Ion/Ioff ratio of around 105 are almost independent of the insulator material. In a double gated thin film transistor using low stress silicon nitride as top gate insulator, transistor parameters are extracted for the identical semiconducting layer when the bottom gate is used and when the top gate is used, respectively. It is shown that the extracted charge carrier mobil ity is not inherent for the ZnO nanoparticle layer but rather an effective value for the device under investigation

Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget

“…In order to obtain a more homogeneous particle size distribution, the suspensions were centrifuged resulting in an average particle size of about 25 nm. The production of the suspensions is described elsewhere [10]. In addition, we used the commercially available suspension 30V50 from Klebosol consisting of SiO 2 particles with an average particle size of about 50 nm.…”

Advances in Bioresorbable Materials and Electronics

“…These materials are compatible with a range of growth and deposition techniques, and with associated patterning options, thereby enabling selective application to desired regions of a substrate. Previous studies demonstrate uses of such materials in capacitors, , transistors, , interlayers, , passivation coatings, and barriers against water permeation. ,, Bioresorption occurs under physiological conditions via hydrolytic processes. Silicon oxide and silicon nitride deposited by plasma-enhanced chemical vapor deposition (PECVD) represent good choices for inorganic materials-based encapsulation .…”

“…SiO 2 , Si 3 N 4 , and MgO are useful in bioresorbable capacitors as insulators and in transistors as gate dielectrics. For fabrication of bioresorbable p- and n-type metal oxide semiconductor field-effect transistors (MOSFETs), Si NM (300 nm thick); SiO 2 , Si 3 N 4 , and MgO (<200 nm thick); and Mg (300 nm thick) can be used for channels, gate dielectrics, and electrodes, respectively. ,,, Bioresorbable capacitors with these materials use conventional metal–insulator–metal structures. Recent applications of inorganic dielectric materials as insulators with corresponding dielectric constants (3.7–3.9 for SiO 2 ; 7.5 for Si 3 N 4 ; 9.8 for MgO) are in structures of Mg/SiO 2 /Mg and Mg/MgO/Mg. , …”