Properties of RF magnetron sputtered zinc oxide thin films

Ondo-Ndong, R.; Ferblantier, G.; Kalfioui, M. Al; Boyer, Alexandre; Foucaran, A.

doi:10.1016/s0022-0248(03)01243-0

Cited by 117 publications

(53 citation statements)

References 16 publications

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“…These XRD patterns indicated the films are polycrystalline and have a wurtzite (hexagonal) structure with the lattice parameters: a = 3.2498 Å and c = 5.2066 Å . The presence of oxygen in the residual atmosphere makes the preferred c-axis orientation of the ZnO crystallites to be perpendicular to the substrate surface [20]. We emphasize that the materials used as substrates for ZnO thin films have an important role in the deposition procedure.…”

Section: Resultsmentioning

confidence: 99%

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

Prepelita

Medianu

Sbarcea

et al. 2010

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

Prepelita

Medianu

Sbarcea

et al. 2010

Applied Surface Science

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“…The lattice parameter value of each sample as well as that of undoped ZnO (ZO) grown under the same conditions that EZO and EYZO, have been estimated from the diffraction peaks related to the ZnO wurtzite structure (see Table 1). All as-deposited films showed c parameter values slightly higher than that of stress-free ZnO powder specimen (c=0.521 nm, a=0.325 nm) [18], indicating that the unit cells are elongated along the c-axis and the compressive forces were predominant as usual in RF sputtered ZnO thin films [21][22][23]. The internal compressive stress in the as-deposited films is assigned to the bombardment of energetic particles during deposition and not to the thermal stress originating from the difference between the thermal expansion coefficients of the film and the substrate.…”

Section: Resultsmentioning

confidence: 99%

Up-conversion effect of Er- and Yb-doped ZnO thin films

et al. 2014

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Visible up-conversion in ZnO:Er and ZnO:Er:Yb thin films deposited by RF magnetron sputtering under different O 2 -rich atmospheres has been studied. Conventional photoluminescence (325 nm laser source) and up-conversion (980 nm laser source) have been performed in the films before and after an annealing process at 800°C. The resulting spectra demonstrate that the thermal treatment, either during or postdeposition, activates optically the Er 3+ ions, being the latter process much more efficient. Moreover, the atmosphere during deposition was also found to be an important parameter, as the deposition under O 2 flow increases the optical activity of Er +3 ions. In addition, the inclusion of Yb 3+ ions into the films has shown an enhancement of the visible up-conversion emission at 660 nm by a factor of 4, which could be associated to either a better energy transfer from the 2 F 5/2 Yb level to the 4 I 11/2Er one, or to the prevention of having Er 2 O 3 clustering in the films.2

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“…Pure and doped ZnO is one of the first suitable semiconductors widely used for sensing O 2 [1], H 2 [2], NO x [3][4][5], ethanol [6][7][8][9][10] and humidity [11], which shows instant change in electrical resistance when exposed to inflammable materials like organic solvent vapors, petrol vapors and methane gas that pose a threat to safety when they cross their thresholds limit in air. Most of research work deals with pure and doped ZnO thin film by rare earth atoms [11][12][13][14][15][16][17][18][19][20], and transition elements [21] encourage their use as gas *Corresponding author. E-mail: mazhar42pk@yahoo.com sensing devices [22], transparent electrodes [23] and piezoelectric devices [24].…”

Section: Introductionmentioning

confidence: 99%

High efficiency ZnO nano sensor, fabrication and characterization

Hussain

Mazhara

Hussainb

et al. 2010

JICS

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Ultra fine thin films of pure and SnO doped ZnO nanosensor were grown on gold digitated ceramic substrate from bis(2, 4-pentanedionate)dimethylethanolamine zinc (II) using bis(2, 4-pentanedionate) tin(II) chloride as a dopant by ultrasonic aerosol assisted chemical vapor deposition technique (UAACVD) at temperature range of 400-450 °C under oxygen atmosphere at 5 Pa pressure. The sensitivity, selectivity, fast recovery, and reliability test performed on nanosensor suggested that both doped and undoped ZnO thin films are suitable for detecting ethanol vapor in the temperature range of at 60 to 150 °C, whereas at room temperature (25 °C ) response and recovery time of the sensor increases many folds compared to 60 °C. Sensitivity of the ZnO sensor shows linear relationship with the increase of gas concentration. Electrical properties show that 1 % SnO doped ZnO enhanced the sensitivity of the film drastically and thus improved its detecting efficiency. Physico-chemical techniques like, CHNS-O, atomic absorption analyzer, and infra red and multinuclear nuclear magnetic resonance spectrometers were used for precursor characterization. X-ray diffractometer, scanning electron microscope, sigma scan analyzer and energy dispersive x-ray techniques were used for thin film characterization.

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Properties of RF magnetron sputtered zinc oxide thin films

Cited by 117 publications

References 16 publications

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

Up-conversion effect of Er- and Yb-doped ZnO thin films

High efficiency ZnO nano sensor, fabrication and characterization

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