Properties of porous silicon nano-explosive devices

Plessis, Monuko du

doi:10.1016/j.sna.2006.10.012

Cited by 66 publications

(47 citation statements)

References 10 publications

(17 reference statements)

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“…They found that on freshly prepared surfaces, the explosive reaction would occur spontaneously at temperatures as low as 4.2 K. On aged pSi, the surface was stable enough to not explode spontaneously, but could be initiated as a result of mechanical impact or heating by an ultraviolet laser. Research has accelerated since these works, and numerous groups have found that various oxidising agents are capable of producing the strong explosive reactions [8][9][10][11][12][13][14][15][16][17]. These agents typically include sodium perchlorate, aluminium or potassium nitrates, sulphur, potassium permanganate and potassium dichromate, with different groups reporting varying degrees of success with these agents.…”

Section: Introductionmentioning

confidence: 99%

“…The influences on the explosive performance of these systems has been shown [8][9][10]16] to include the size and depth of the pores (in turn influenced by the etching variables of HF concentration, wafer properties, etching current and time), the choice of oxidising agent and ratio of Si to oxidising agent. This work will explore the effect that some of these influences have on the energetic performance of pSi.…”

Section: Introductionmentioning

confidence: 99%

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The influence of pore size and oxidizing agent on the energetic properties of porous silicon

et al. 2008

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The explosive properties of porous silicon (pSi) provide an alternative to existing carbon-based explosives. Here, an investigation into these explosive properties is conducted, by introducing an oxidiser onto freshly etched pSi films with varying pore sizes as determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Explosions are triggered via the application of an electric spark. Light output and spectral data are collected to characterize the explosion. Measurements of light output indicate that sodium perchlorate produces the most brilliant explosions, however spectral data indicate that aluminium and gadolinium nitrates produce hotter explosions. The energy output is measured by means of Differential Scanning Calorimetry (DSC), indicating that almost 9 kJ/g is released, double that released by the detonation of TNT. The energetic material cyclo-1,3,5-trimethylene-2,4,6-trinitramine (RDX) is added to investigate a method of improving explosive performance of pSi, with disappointing results.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The influence of pore size and oxidizing agent on the energetic properties of porous silicon

et al. 2008

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“…28 Due to the large surface area and the possibility of spontaneous oxidation to form a hydrophilic silicon dioxide layer, the NPS surface is an excellent substrate for preparing a metal-free conducting polymer-modified electrode. The uppermost layer of the SEM image shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Label-free Electrochemical Detection of the Human Adenovirus 40/41 Fiber Gene

Song

Jin

2015

ANAL. SCI.

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A nanoporous silicon-based label-free DNA biosensor was fabricated to monitor rapidly enteric adenovirus types 40 and 41, a leading cause of viral gastroenteritis in children. Nanoporous silicon (NPS) was formed by an anodic etching process in a mixture solution containing hydrofluoric acid and ethanol. The polypyrrole (PPy) film was directly electropolymerized on The NPS substrate. Twenty-five base pairs of probe DNA (pDNA), derived from the fiber gene, was electrochemically doped on the PPy-coated NPS substrate. The conductivity change due to the immobilized pDNA and hybridized target DNA (tDNA) was expressed as an arbitrary factor, γ, which is a normalized numerical term used for the selective quantification of the tDNA. γ was inversely proportional to the concentration of complementary tDNA, but independent of the non-complementary tDNA. The sensitivity slope for detecting tDNAc was -1.54 μM -1 , based on the factor γ in the range of 0.4 to 1.0 μM of tDNA. The surface roughness was characterized using atomic force microscopy.

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“…прошлого века благодаря широкому спектру применений, в том числе в качестве материала, быстрое окисление кото-рого сопровождается горением или взрывом [2][3][4]. Как было показано в работах [4,5], кинетика горения во многом определяется толщиной стенок пор, пористо-стью и удельной площадью поверхности por-Si. Чем больше площадь поверхности и тоньше стенки пор, тем выше скорость горения Si.…”

Section: Introductionunclassified

“…Известно, что кинетика горения Si зависит от толщины слоя и пористости [4], а также от состава окислителя [5]. Очевидно, что и толщина стенок пор может существенно влиять на скорость горения.…”

Section: Introductionunclassified

Влияние типа и степени легирования на морфологию por-Si, полученного гальваническим травлением

Пятилова¹,

Gavrilov²,

Шиляева³

et al. 2017

Физика И Техника Полупроводников

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Изучен процесс формирования слоев пористого кремния гальваническим травлением в растворе HF/C2H5OH/H2O2 монокристаллического Si, легированного бором и фосфором. Проведено исследование por-Si методами капиллярной конденсации азота и растровой электронной микроскопии. Установлены зависимости морфологических характеристик por-Si, таких как диаметр пор, удельная площадь и объем поверхности, толщина стенок пор, определяющих кинетику горения Si, от типа легирования и удельного сопротивления исходной пластины. DOI: 10.21883/FTP.2017.02.44101.8327

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Properties of porous silicon nano-explosive devices

Cited by 66 publications

References 10 publications

The influence of pore size and oxidizing agent on the energetic properties of porous silicon

The influence of pore size and oxidizing agent on the energetic properties of porous silicon

Label-free Electrochemical Detection of the Human Adenovirus 40/41 Fiber Gene

Влияние типа и степени легирования на морфологию por-Si, полученного гальваническим травлением

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