Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

Abstract

Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films

n-Type conducting P doped ZnO thin films via chemical vapor deposition

“…The P 2p 3/2 transitions were at $132.9 eV, corresponding to literature reports for P 5+ . [40][41][42] No indication of P 3+ or P 3À was found on the surface of the thin lms. The peaks at $139 eV that were seen in the P 2p scan range belongs to Zn 3s transitions.…”

“…The peaks at $139 eV that were seen in the P 2p scan range belongs to Zn 3s transitions. 41 XPS depth proling carried out on the 14.3 at% doped lm (see ESI Fig. S1 †) showed the P to be surface segregated as opposed to evenly distributing across the depth of the lms.…”

“…The results of this study show that P doping of ZnO under a simple, saleable and industrially relevant technique such as AACVD with inexpensive and easy to handle precursors is able to produce sufficiently n-type conductive and stable thin lms. Table 3 Compares with some other P doped ZnO thin films via different precursors and synthesis methods 41,51,52 Zn…”

Unfolding the conductivity reversal n- to p-type in phosphorus-doped ZnO thin films by spin-on dopant (SOD) process

“…As mentioned in table 4 for SOD samples prepared at 700 • C and 800 • C, one more peak P2 around ∼134.8 eV is found. This peak is assumed to come from phosphorus state and PO 4 ions in pure P 2 O 5 [35]. The same peak has disappeared in SOD samples prepared at 900 • C-1000 • C, which means the phosphorus is fully incorporated into the lattice.…”

Structural and Optical Properties of Nitrogen‐doped Zinc Oxide Thin Films Grown on Muscovite Mica Substrates Using Sol–Gel Process

“…Accordingly, it is necessary to realize an efficient p‐type doping and to analyze the characteristics of ZnO doped with p‐type materials for the development of ZnO‐based optoelectronic devices. Great efforts have been made to obtain p‐type ZnO films by doping with acceptor materials such as nitrogen (N), arsenic (As), and phosphorus (P) . However, As and P do not contribute significantly to p‐type conduction because they are deep acceptors .…”