n-Type conducting P doped ZnO thin films <i>via</i> chemical vapor deposition

Zhao, Dan; Li, Jianwei; Sathasivam, Sanjayan; Carmalt, Claire J.

doi:10.1039/d0ra05667g

Cited by 21 publications

(13 citation statements)

References 52 publications

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“…For both the ZnO based lms deposited using THF and MeOH as solvents, the nominally undoped ZnO lm consisted of randomly oriented grains in varying sizes, similar to what has previously been seen for CVD grown ZnO. 13 As B was introduced into the lms, minimal impact on the morphology was observed for the lms grown from THF solutions, however when MeOH was used as the solvent the presence of the B dopant caused a more noticeable change in the surface morphology. Previous reports have described the inuence that MeOH can have on the microstructure of thin lms deposited via AACVD, and in general aerosols from different solvents can inuence the microscopic surface morphology besides their normal transportation effect.…”

Section: Scanning Electron Microscopysupporting

confidence: 67%

“…This is due to the smaller B 3+ (0.23 Å) ions substituting for the larger Zn 2+ (0.60 Å) ions resulting in a unit cell contraction. 13,42 With MeOH as the solvent, where solubility of Zn(OAc) 2 $H 2 O is high and the [BEt 3 ] solution is immiscible, no change in the ZnO unit cell volume was observed upon doping. This is likely due to the very low concentrations of B actually doping into the lm therefore minimizing the distortion caused to the ZnO lattice.…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…This is associated with the increase in free carrier concentration caused by B 3+ substitution that leads to an increase in the plasmon resonance frequency from the NIR towards the visible. 6,13,46 Hall effect measurements…”

Section: Uv-visible-near Infrared Spectroscopymentioning

confidence: 99%

“…12 Research into new TCOs is needed to nd potential replacements for ITO and FTO. 5,[13][14][15][16][17] TCOs based on ZnO have the potential to become leading players due to the high abundance of Zn and low cost. 18,19 The band gap of ZnO is ∼3.37 eV leading to high transmittance.…”

Section: Introductionmentioning

confidence: 99%

“…20,21 Traditionally, ZnO is doped with Group 13 ions such as Al 3+ or Ga 3+ as their higher valence and acceptable ionic radii allow for an increase in carrier concentration without massive distortion of the ZnO lattice. 7,13,14 Typically resistivities as low as 5.6 × 10 −4 U cm 22 and 5.0 × 10 −3 U cm 7 have been achieved via both physical 22,23 and chemical vapor deposition 7 routes.…”

Section: Introductionmentioning

confidence: 99%

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Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

et al. 2022

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Section: Scanning Electron Microscopysupporting

confidence: 67%

Section: X-ray Diffractionmentioning

confidence: 99%

Section: Uv-visible-near Infrared Spectroscopymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

et al. 2022

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Transparent Conductive Titanium and Fluorine Co‐doped Zinc Oxide Films

Ramzan,

Borowiec,

Parkin

et al. 2024

ChemPlusChem

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Aerosol‐assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine‐doped and titanium‐fluorine co‐doped ZnO thin films on glass substrate at 450 oC. All films were characterized by X‐ray photoelectron spectroscopy (XPS), X‐ray diffraction (XRD), UV‐Vis spectroscopy, scanning electron spectroscopy (SEM), and four‐point probe. The films were 600‐680 nm thick, crystalline, and highly transparent (80‐87%). The co‐doped film consisted of 0.70 at.% titanium and 1 at.% fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm2 V‐1 s‐1, 3.97 x 1020 cm‐3, and 1.69 x 10‐3 Ω cm, respectively. A band gap of 3.6 eV was observed for the co‐doped film. Compared to the undoped and singly doped films, the co‐doped film displayed a notably higher structure morphology (more homogenous grains with well‐defined boundaries) suitable for transparent conducting oxide applications.

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Recent Advances in Processing and Applications of Heterobimetallic Oxide Thin Films by Aerosol‐Assisted Chemical Vapor Deposition

Ehsan

Shah

Basha

et al. 2021

The Chemical Record

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The fabrication of smart, efficient, and innovative devices critically needs highly refined thin‐film nanomaterials; therefore, facile, scalable, and economical methods of thin films production are highly sought‐after for the sustainable growth of the hi‐tech industry. The chemical vapor deposition (CVD) technique is widely implemented at the industrial level due to its versatile features. However, common issues with a precursor, such as reduced volatility and thermal stability, restrict the use of CVD to produce novel and unique materials. A modified CVD approach, named aerosol‐assisted CVD (AACVD), has been the center of attention due to its remarkable tendency to fabricate uniform, homogenous, and distinct nano‐architecture thin films in an uncomplicated and straightforward manner. Above all, AACVD can utilize any custom‐made or commercially available precursors, which can be transformed into a transparent solution in a common organic solvent; thus, a vast array of compounds can be used for the formation of nanomaterial thin films. This review article highlights the importance of AACVD in fabricating heterobimetallic oxide thin films and their potential in making energy production (e. g., photoelectrochemical water splitting), energy storage (e. g., supercapacitors), and environmental protection (e. g., electrochemical sensors) devices. A heterobimetallic oxide system involves two metallic species either in a composite, solid solution, or metal‐doped metal oxides. Moreover, the AACVD tunable parameters, such as temperature, deposition time, and precursor, which drastically affect thin films microstructure and their performance in device applications, are also discussed. Lastly, the key challenges and issues of scaling up AACVD to the industrial level and processing for emerging functional materials are also highlighted.

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n-Type conducting P doped ZnO thin films via chemical vapor deposition

Abstract: P doped ZnO thin films showing enhanced electrical conductivity.

Cited by 21 publications

References 52 publications

Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

Transparent Conductive Titanium and Fluorine Co‐doped Zinc Oxide Films

Recent Advances in Processing and Applications of Heterobimetallic Oxide Thin Films by Aerosol‐Assisted Chemical Vapor Deposition

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