Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

Hacker, Nigel P.; Davis, Gary C.; Figge, Lisa K.; Krajewski, Todd; Lefferts, Scott; Nedbal, J.; Spear, Richard

doi:10.1557/proc-476-25

Cited by 26 publications

(16 citation statements)

References 2 publications

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“…Oligomeric methyl silsesquioxane (O‐MSSQ) is recognized as a class of low dielectric constant materials for deep submicrometer integrated circuits (IC) processes 12–15. In this case, an O‐MSSQ precursor with SiOCH 3 or SiOH end groups is first prepared and is then spin‐coated and cured at different temperatures to form a low dielectric constant thin film.…”

Section: Introductionmentioning

confidence: 99%

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Structural control of oligomeric methyl silsesquioxane precursors and their thin‐film properties

Lee

Chen

Liu

2002

J. Polym. Sci. A Polym. Chem.

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Oligomeric methyl silsesquioxane (O‐MSSQ) precursors were prepared from methyl trimethoxysilane (MTMS) in a mixed solvent of methyl isobutyl ketone and tetrahydrofuran by variations in the pH and molar ratio of water to MTMS (R1). The molecular structures of O‐MSSQ were controlled by the reaction conditions. At a fixed pH value, the percentage of the end group, SiOCH3, decreased with increasing R1, but that of SiOH increased. With the pH increasing, the ratio of SiOCH3 groups to SiOH groups was enhanced, but ratio of the molecular weights was reduced. The molecular weight distribution was progressively broader as the pH value decreased. These results were explained by the effects of R1 and pH on the hydrolysis and condensation reactions. The prepared O‐MSSQ precursors consisted of mixed cage and network structures. The ratio of cage structures to network structures increased at low pH and high R1 values. Highly uniform thin films were spin‐coated from the O‐MSSQ precursors, and this was followed by multistep curing. The content of cage structures in O‐MSSQ films decreased with increasing curing temperatures, whereas the network content in O‐MSSQ films showed the opposite trend. Such a structural transformation resulted in significant variations in the physical properties. Both the refractive index and dielectric constant decreased with higher cage/network ratios because of changes in the molar volume. The prepared O‐MSSQ has potential applications as a low dielectric constant material. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 40: 1560–1571, 2002

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Section: Introductionmentioning

confidence: 99%

“…The structural rearrangements of O‐MSSQ also occur during curing. Part of the O‐MSSQ cage structure transforms into a network structure 13–15. These rearrangements result in significant variations in the physical properties after thermal curing, including the refractive index, dielectric constant, and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Structural control of oligomeric methyl silsesquioxane precursors and their thin‐film properties

Lee

Chen

Liu

2002

J. Polym. Sci. A Polym. Chem.

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“…Among the films prepared by the spincoating technique are spin on glasses ͑SOG͒ containing Si, C, O, H, and having dielectric constants below 3. 4 Potential candidates of non-spin-on low-k dielectrics are plasmadeposited diamondlike carbon ͑DLC͒ and fluorinated DLC ͑FDLC͒ 5-7 and films containing Si, C, O, and H deposited by a downstream plasma process. 8 The latter films were claimed to have a dielectric constant lower than 3.0 and be stable to 500°C.…”

Section: Introductionmentioning

confidence: 99%

Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

Grill

Patel

1999

Journal of Applied Physics

171

127

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Dielectric films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition from mixtures of tetramethylsilane with oxygen. The films have been characterized as-deposited and after annealing at 400 °C to determine the thermal stability of their properties. Rutherford backscattering and forward recoil elastic scattering have been used for determination of the composition of the films. Optical properties were characterized by Fourier transform infrared spectroscopy and measurements of the index of refraction and optical gap. The electrical properties were measured in a Si/insulator/metal configuration. It has been found that the index of refraction decreases and the optical gap and dielectric constant increase with increasing oxygen concentration in the gas feed. While the materials did not show a mass or composition loss after annealing, the annealing resulted in a reduction of the dielectric constant of the films. Dielectric constants as low as 3.1 have been obtained after annealing the film deposited from pure tetramethylsilane.

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“…Among the early low-k candidates for BEOL dielectrics were spin-on glasses (SOG) containing Si, C, O, H, and having dielectric constants below 3, such as methylsilsesquioxanes (MSQ) [38]. The organosilicon polymers were expected to preserve some characteristics of the silicon dioxide that would facilitate their integration in the interconnect structure.…”

Section: Sicoh Films As Low-k and Ultralow-k Dielectricsmentioning

confidence: 99%

Low and Ultralow Dielectric Constant Films Prepared by Plasma‐enhanced Chemical Vapor Deposition

Grill

2007

Dielectric Films for Advanced Microelectronics

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Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

Cited by 26 publications

References 2 publications

Structural control of oligomeric methyl silsesquioxane precursors and their thin‐film properties

Structural control of oligomeric methyl silsesquioxane precursors and their thin‐film properties

Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

Low and Ultralow Dielectric Constant Films Prepared by Plasma‐enhanced Chemical Vapor Deposition

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