Properties of Nd-doped Bi4Ti3O12 thin films grown by metalorganic solution decomposition

Structural and electrical properties of samarium-substituted bismuth titanate ferroelectric thin films on Pt/TiOx/SiO2/Si substrates

“…These values of e r are smaller than that reported for a BSmT film on platinized silicon prepared by MOSD (387 at 1 MHz) [7], and higher than that of a MOSD-derived BNdT film (110 at 100 kHz) [24], but tand in our films is much smaller than these latter two films dielectric constants of¨150,¨180,¨225, respectively at 100 kHz, suggesting an enhancement of the polarization by La and Nd substitution [25]. Another comparative study by Zhang et al on highly epitaxial c-axis-oriented BiT and BNdT films on LaNiO 3 -coated LaAlO 3 substrates grown by PLD showed that films had dielectric constants of¨130 and 180, respectively [26].…”

Raman scattering, electronic, and ferroelectric properties of Nd modified Bi4Ti3O12 nanotube arrays

“…5, the voltage changed from Ϫ30 to +30 V and the leakage current density were below 1.4 ϫ 10 −10 A / cm 2 for all three samples in which different Nd content doped. The insulating properties are better than that of Bi 3.15 Nd 0.85 Ti 3 O 12 thin film and other rare-earth elements doped BIT thin films, [29][30][31] which is possibly caused by the discontinuous nanotubes or the bad contact between nanotubes and electrodes. One can also see that the leakage current density has a little decrease with the increasing content of Nd in the compound.…”