Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

Grandusky, James R.; Gibb, Shawn R.; Mendrick, Mark C.; Schowalter, L. J.

doi:10.1143/apex.3.072103

Cited by 64 publications

(34 citation statements)

References 19 publications

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“…Even then, these methods were only successful in reducing the DD to the 10 8 cm 22 range. 6 This high DD limits both the efficiency and the reliability of devices grown on such layers. 7,8 An alternative and also possibly the best approach for reducing the DD is the use of a low defect AlN substrate.…”

Section: Introductionmentioning

confidence: 99%

Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds

Sumathi

2013

CrystEngComm

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Physical vapour transport growth of aluminium nitride (AlN) single crystals on silicon carbide (SiC) substrates has been optimised and crack-free, large-area, free-standing (0001) AlN wafers were prepared from the grown template crystals. 28 mm diameter single crystals without any polycrystalline surroundings were obtained. Different off-oriented substrates give rise to different growth modes. Sharp and symmetric line shapes of X-ray diffraction (XRD) rocking curves and high intense Raman phonon mode peaks prove high structural quality and homogeneity of the grown crystals. Full width at half maximum of the rocking curves is 72 arcsec for symmetric 00. demonstrates that AlN templates prepared on SiC as a foreign substrate can be used as native seeds for the growth of further homo-epitaxial layers and crystalline boules.

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Section: Introductionmentioning

confidence: 99%

Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds

Sumathi

2013

CrystEngComm

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“…Low dislocation density AlGaN epilayers with both symmetric and asymmetric rocking curves below 100 arcsec have been grown on these AlN wafers. Significant improvements in the performances of DUV LEDs have also been demonstrated by the use of PVT-AlN substrates [2,[43][44][45]. For instance, an IQE of 80% was reported for AlGaN multiple quantum wells with emission wavelength of 258 nm grown on PVT-AlN substrates, achieved with the reduction of point defects by growth optimization [46].…”

Section: Growth and Optical Properties Of Bulk Aln For Duv Ledsmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…Significant improvements in the performances of DUV LEDs have also been demonstrated by the use of PVT-AlN substrates. [2,[40][41][42] For instance, an IQE of 80% was reported for AlGaN multiple quantum wells with emission wavelength of 258 nm grown on PVT-AlN substrates, achieved with the reduction of point defects by growth optimization. [43] In addition to crystal quality and size, UV transparency of AlN substrate is also of crucial importance for applications in DUV LEDs.…”

Section: Growth and Optical Properties Of Bulk Aln For Duv Ledsmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

Cited by 64 publications

References 19 publications

Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds

Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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