Properties of Mg doped GaAs grown by molecular beam epitaxy

Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy

“…Mg is also commonly used as a p-type dopant for GaN [8,9] and related materials, such as InGaN [10] and AlGaN [11], even at high growth temperatures. From these reasons, Mg may be suggested as the most acceptable p-type dopants for III-V compound semiconductors grown at low growth temperatures below 500 1C [12].…”

Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy

“…The low‐temperature PL spectrum shows a strong emission from the GaAs DQR at 1.729 eV with FWHM of 85 meV and a GaAs near‐band‐edge emission peak at 1.492 eV. The emission at 1.492 eV is a free‐to bound exciton transition of an unintentional donor or acceptor from near the GaAs band edge . In contrast, the low‐temperature PR spectrum has mainly four transition features: the GaAs near‐band‐edge, the surface confined states (SCS), DQR, and WL transitions.…”

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE

“…However, the sticking coefficient of Mg on GaAs is low ( $ 10 À 5 ) at the typical MBE growth temperature of GaAs (560 1C) [31]. Recently, Mg is successfully doped up to p t1 Â10 19 cm À 3 in low-temperature GaAs at around 480 1C by solid-source MBE [32,33]. The impurity energy of Mg in GaAs is 28 meV [34], indicating that Mg is a very shallow acceptor element.…”