Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy

Park, Ho Jin; Kim, Jong-Ho; Kim, Min Su; Kim, Do Yeob; Kim, Jong Su; Son, Jeong‐Sik; Ryu, Hyukhyun; Cho, Guan Sik; Jeon, Minhyon; Leem, Jae Young

doi:10.1016/j.jcrysgro.2007.12.064

Cited by 13 publications

(10 citation statements)

References 18 publications

(28 reference statements)

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“…Figure 3 shows the Arrhenius plot of the electrical resistivity ( ) of individual NWs (NW1 to NW4) between 400 and 300 K. The electronic transport in this temperature region in bulk p-type GaAs is due to free holes in the valence band, thermally ionized from shallow acceptors levels. In our case, these acceptors levels are created by Mg impurities and present ionization energy of 28 meV [15][16][17].…”

Section: Resultsmentioning

confidence: 87%

“…Semiconductor nanowires (NWs) of III-V compounds [1][2][3][4][5] are promising nanostructures for optoelectronic devices applications [5,6]. However, the influence of temperature as well as the polytypism in the transport mechanisms of p-type doped III-V NWs has been barely investigated [6][7][8][9][10][11][12][13][14][15]. In this work, we present a study of the electrical transport properties of polytypic and p-type Mg doped GaAs NWs near and above room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Properties of Polytypic Mg Doped GaAs Nanowires

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Viana

Limborço

et al. 2016

Journal of Nanomaterials

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The electrical transport properties of individual Mg doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The temperature dependence of the electrical resistivity above room temperature shows that the polytypic structure of the NWs strongly modifies the NWs charge transport parameters, like the resistivity activation energy and holes mobility. At lower temperatures the NWs exhibit variable range hopping conduction. Both Mott and Efros-Shklovskii variable range hopping mechanisms were clearly identified in the nanowires.

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Section: Resultsmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Cifuentes

Viana

Limborço

et al. 2016

Journal of Nanomaterials

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“…Semiconductor nanowires (NWs) of III–V compounds such as InP and In x Ga 1− x As , are promising nanostructures for optoelectronic devices . The electronic transport mechanisms as well as the p‐type doping of GaAs NWs have been investigated .…”

Section: Introductionmentioning

confidence: 99%

Electronic transport in p‐type Mg‐doped GaAs nanowires

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Limborço

Viana

et al. 2016

Physica Status Solidi (b)

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The electronic transport properties of several Mg-doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic and noncarcinogenic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The study of the temperature dependence of the electrical resistivity of the nanowires shows that electronic transport changes from conduction of free holes, above room temperature, to variable hopping conduction at lower temperatures. Both, Mott and Efros-Shklovskii variable range hopping mechanism were clearly identified in the nanowires.

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“…At present, Be is the most commonly used p-type dopant in bulk GaAs due to its near-unity sticking coefficient and low vapor pressure at the usual growth temperatures used in MBE. [37][38][39] However, due to the high toxicity of Be, several attempts have been made to find nontoxic and noncarcinogenic alternatives. Mg is a promising one as it originates a shallow acceptor level in GaAs with an ionization energy of 28 meV.…”

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confidence: 99%