Properties of Indium Molybdenum Oxide Films Fabricated Via High-Density Plasma Evaporation at Room Temperature

Abstract

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo‧In)Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex Mo‧‧‧In Oi″]‧ dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10−4 Ω cm (corresponding to a mobility of 14.6 cm2V−1s−1 and carrier concentration of 14.3 × 1020 cm−3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

Optical properties of pure and transition metal‐doped indium oxide

“…For example, indium oxide doped with tin (ITO) acts as a metal-like material due to the high density of free electrons in the conduction band and can be used as a good spectral-selective surface for solar collectors [5]. Recently, a novel transparent conductive film, molybdenum-doped indium oxide, with mobility twice that of TCO materials, has been developed [6][7][8][9].…”

Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin films

“…The base and deposition pressures were maintained at 6.5 Â 10 À4 Pa and 1.0 Pa, respectively. The oxygen volume percentage (OVP) calculated using the relation found in [6] from the partial pressures of oxygen {(1.1-3.4) Â 10 À2 Pa} and argon {(1.3-3.2) Â 10 À1 Pa} ranged between 3.5% and 17.5%. The target-substrate distance was fixed at 12 cm.…”

Preliminary studies on molybdenum-doped indium oxide thin films deposited by radio-frequency magnetron sputtering at room temperature

“…The deposition pressure was set using throttling valve to 1.0 Pa. The ratio of oxygen volume percentage (O 2 vol.%) in the sputtering chamber was estimated from the partial pressures of oxygen and argon using the relation [6,10,13,14] …”

“…Toward this a novel high quality TCO of molybdenum-doped indium oxide (IMO) was reported by Meng et al in 2001 [8] with a valence difference of 3; they found that the molybdenum (Mo) doping in In 2 O 3 decreased the resistivity significantly without deteriorating the spectral transmittance. Since then many researchers have studied this material employing various deposition techniques [4,5,[8][9][10][11][12][13][14][15][16][17]. Gurlo et al reported on thinfilm semiconductor sensors based on MoO 3 -In 2 O 3 [18].…”

“…Available literature quotes substrate temperature ranging from 120-550°C, with the exception of high-density plasma evaporation [13,14]. The sol-gel technique quotes a calcination temperature of 700°C [18].…”