Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin films

Elangovan, E.; Martins, Rodrigo; Fortunato, Elvira

doi:10.1016/j.jnoncrysol.2007.12.015

Cited by 1 publication

(1 citation statement)

References 11 publications

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“…Initially, it was presumed that the sample was not properly prepared, because in Hall measurements, the main source of experimental error can arise from the sample preparation itself; i.e. from the dimensions of sample and contact spots [46]. The samples were prepared in a van der Pauw configuration, with due care that the effective dimensions of the sample and contact spots (created by silver paint or by other means) are essentially same for all the measurements and as symmetric as possible.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

Elangovan¹,

Flores²,

Janeiro³

et al. 2015

Oxide-Based Materials and Devices VI

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Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In 2 O 3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n-type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % -90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (E g ) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as-deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

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Section: Electrical Propertiesmentioning

confidence: 99%