Properties of High Voltage Stress Generated Traps in Thin Silicon Oxides

Scott, R. S.; Dumin, N. A.; Hughes, T. W.; Dumin, D. J.; Moore, B.T.

doi:10.1109/irps.1995.363347

Cited by 3 publications

(5 citation statements)

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“…It is likely that the actual traps do not have symmetric energy levels. The traps have many different energy levels, probably correlated with the strength of the bond that is being distorted or broken [34,45,530,532,533]. The traps are neutral, as generated, since the trap connected to the valance band is filled with an electron, and the trap connected to the conduction band is empty.…”

Section: Oxide Trap Generationmentioning

confidence: 99%

“…This dependence is needed when using trap generation data and statistical models to calculate the TDDB distributions for different oxide thicknesses and fields [48,49,562,697,698]. The time dependence of trap generation has been reported by several workers [48,506,530,588,605,621,[700][701][702][703]. In general, the trap generation rate is fast initially and becomes slower as the density of traps increases, in agreement with a model of trap generation based on breaking the bridging oxygen bond, as described in Figures 21 and 22.…”

Section: Si -O -Simentioning

confidence: 99%

“…There has been much written on the properties of the traps, including their tunnel charge/discharge effects [337,530,532,533,668]. However, for brevity it is probably better to summarize the trap generation information obtained to date.…”

Section: Si -O -Simentioning

confidence: 99%

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Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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Section: Oxide Trap Generationmentioning

confidence: 99%

Section: Si -O -Simentioning

confidence: 99%

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Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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“…This is to verify whether a correlation between the residual charge trapping and the field acceleration factor exists, as already found for thicker oxides. 4 In Fig. 12 a typical example of leakage voltage evolution measured at 1 nA after stress is reported for a dry oxide.…”

Section: Auger Spectramentioning

confidence: 99%

Electrical Characterization of Highly Reliable 8 nm Oxide

Ghidini¹,

Alessandri²,

Clementi³

et al. 1997

J. Electrochem. Soc.

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“…Accordingly, special circuits were integrated as local heater to cure degraded memory cells to achieve ultra-high endurance flash memory [15]. However, some contradictory experimental data were also reported by showing that no recovery phenomena can be observed in their devices [6,[16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Impacts of extra charges on trap level modulations atcSi/aSiO₂interface: correlations to leakage current recovery in oxide dielectric

Ma¹,

Wang²,

Wei³

et al. 2020

J. Phys. D: Appl. Phys.

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Reliability issues in metal-oxide-semiconductor field-effect transistor (MOSFET) are closely related to oxide dielectric degradation under electric field stressing, such as stress-induced leakage current (SILC). Some studies show that SILC induced dielectric degradation can be cured by high-temperature annealing while some others show contradictory results. A possible microscopic mechanism could be related to different states of oxygen vacancies in the oxide dielectric because these defects contribute to the leakage current via trap-assisted tunneling (TAT). Here, by first-principles calculations, we demonstrate that the leakage current recovery can be explained in terms of the modulation of trap levels by extra charges. It is found that, with extra holes around the defect, the trap level will be moved far away from the Si valence band and leave the TAT window, which accordingly assists SILC recovery. On the contrary, with extra electrons around the defect, the trap level will be closer to the Si conduction band, having no contribution to the SILC recovery. This study provides a theoretical perspective on the dielectric recovery mechanisms by including the impacts of extra charges.

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Properties of High Voltage Stress Generated Traps in Thin Silicon Oxides

Cited by 3 publications

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Oxide Wearout, Breakdown, and Reliability

Oxide Wearout, Breakdown, and Reliability

Electrical Characterization of Highly Reliable 8 nm Oxide

Impacts of extra charges on trap level modulations atcSi/aSiO₂interface: correlations to leakage current recovery in oxide dielectric

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Properties of High Voltage Stress Generated Traps in Thin Silicon Oxides

Cited by 3 publications

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Oxide Wearout, Breakdown, and Reliability

Oxide Wearout, Breakdown, and Reliability

Electrical Characterization of Highly Reliable 8 nm Oxide

Impacts of extra charges on trap level modulations atcSi/aSiO2interface: correlations to leakage current recovery in oxide dielectric

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Impacts of extra charges on trap level modulations atcSi/aSiO₂interface: correlations to leakage current recovery in oxide dielectric