Properties of ferroelectric/ferromagnetic thin film heterostructures

Abstract

Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

Dependence of the Structural and Magnetic Properties on the Growth Sequence in Heterostructures Designed by YbFeO3 and BaFe12O19

“…Different devices were recently produced by combining barium ferrite BaFe 12 O 19 (BaM) with ferroelectric materials to form multiferroic systems with magneto-electric coupling at the well-defined and characterized interface in terms of sharpness, atomic step, and chemical interdiffusion. It has covered thin-film heterostructures such as SrBa 2 Ta 2 O 9 /BaM [ 1 , 2 ], Ba 2 EuFeNb 4 O 15 /BaM [ 3 , 4 ], multilayers composed of BaM layers with Pb(Zr,Ti)O 3 (PZT) [ 5 ] or (Ba,Sr)TiO 3 (BST) [ 6 , 7 , 8 ] or BaTiO 3 perovskite layers [ 9 ], and multiferroic composites [ 10 , 11 , 12 ]. BaM is a very attractive material due to the high anisotropy H a and coercivity H C fields [ 13 , 14 ], which are beneficial for obtaining performant film in perpendicular recording media.…”

Thin films sputtered from Ba2NdFeNb4O15 multiferroic targets on BaFe12O19 coated substrates

“…Different devices were recently investigated combining BaM with a ferroelectric material, i.e. SrBa2Ta2O9/BaM thin films heterostructures [4], multilayers consisting of alternating BaM layers with Pb(Zr,Ti)O3 (PZT) [5] or (Ba,Sr)TiO3 (BST) perovskite layers [6][7][8][9][10][11] and self-assembled BaM clusters embedded in a PZT or BST matrix [12][13][14]. It was also shown that BaTiO3/BaM ceramics exhibit magnetoelectric coupling at room temperature [15,16].…”