Properties of external-cavity high-power semiconductor lasers based on a single InGaAs quantum well at high pulsed current pump

Abstract

Properties of light characteristics of external-cavity high-power semiconductor lasers with an active region based on a single InGaAs quantum well operating at ultrahigh pulsed currents are studied. A maximum peak power of 45 W at 110 A (from the aperture of 100 µm), a linewidth of 0.15 nm, and a wavelength in the range of 1040–1070 nm are demonstrated for an external-cavity laser. The tuning range narrows with an increase in the pump current from 27 nm at a current of 20 A to 23 nm at a current of 100 A. The maximum side-mode suppression ratio is up to 45 dB in the central region of the tuning range, while at the edges of this range it was no worse than 20 dB. It is determined that the tuning range of the laser spectrum is limited by the onset of an additional Fabry–Perot cavity line in the spectrum.

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

“…In this case, optimization of the mask and window widths is still required to reduce the difference for GRE in the outermost and center regions of the ultra-wide window. On the other hand, the effect of the luminescence wavelength variation across the window is useful in various types of tunable laser sources; in particular, in high-power tunable semiconductor lasers with a wide aperture [ 49 , 50 ]. A 100-nm-wide tuning was demonstrated in [ 50 ] for a high-power semiconductor laser with a 100-µm-wide aperture based on a planar QW with a constant composition and thickness.…”

Personalized energy systems based on nanostructured materials

“…At the same time, the actual achieved efficiency of solar cells, which has significantly increased from 11 to 15 % for those previously created on the basis of silicon and germanium, currently does not exceed 39 -41 %, even for a new generation of photovoltaic semiconductor converters. They are developed on the basis of multilayer, for example, AlInGaPAs/GaAs/Si, InGaP, InGaAs and Ge nanoheterostructures of cascade type grown by gas-phase epitaxy from organometallic compounds on silicon and germanium substrates [98][99][100][101][102][103][104][105][106]. At the same time, an increase in the maximum power of the solar cells is achieved not only by improving the structure of p-n junctions, but also by focusing the sun's rays using mirrors and Fresnel mini-lenses.…”