Lattice strain influence on conduction band nonparabolicity in GaAs and InAs: Application to intraband optical absorption in InGaAs-GaAs asymmetric step quantum wells

The infuence of compressive lattice deformations on the zone-center energy band properties of zincblende GaN and InN. Hybrid density functional results

“…In all cases, the solid lines correspond to best polynomials fittings for the obtained results. Such a growing trend of the band edge energy positions agrees with that reported by us for zincblende GaAs, calculated using the tight-binding approach [71]. Since the variation for these energy positions is not homogeneous, the direct band gap (E g ) at k = 0 also augments as a consequence of the compressive biaxial strain, as observed from Fig.…”

“…But, then, above certain magnitude of δa/a, in each case, this quantity decreases. This is something already seen in the tight-binding analysis of strain effect in ZB GaAs and InAs, reported in [71]. In the hydrostatic case, the tendency of m * /m o is very similar for the two compounds, with a greater regularity in the variation what make us think that the computing tools have less problems when the cubic cell symmetry is preserved.…”