Properties of diffused diamond films with n-type conductivity

Popovici, G.; Prelas, M. A.; Sung, T.; Khasawinah, S.; Melnikov, Alexander; Varichenko, V.S.; Зайцев, А.М.; Denisenko, Andrej; Fahrner, W. R.

doi:10.1016/0925-9635(94)05232-8

Cited by 34 publications

(5 citation statements)

References 6 publications

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“…Li has been introduced via a range of methods: implantation [145,148,149,[151][152][153][154], in-diffusion [155][156][157], and during growth [144,158,159]. Different methods yield various levels of success in terms of the resultant conductivity of the doped diamond.…”

Section: Interstitial Dopants: Alkali Metalsmentioning

confidence: 99%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Interstitial Dopants: Alkali Metalsmentioning

confidence: 99%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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“…However, the measured SIMS profiles showed a rapidly decaying shape typical for the recoil mechanism discussed in section 3.4 and, therefore, can hardly be considered as evidence for Li doping. Meanwhile, no significant effect of Li doping on luminescence (Popovici et al 1995c(Popovici et al , 1997, photocurrent (Zeisel et al 2000), or on absorption spectra (Nesladek et al 1996) has been observed yet. So, the question of whether or not Li may be incorporated in diamond remains open.…”

Section: Lithiummentioning

confidence: 99%

Chemical vapour deposition diamond studied by optical and electron spin resonance techniques

Iakoubovskii

Stesmans

2002

J. Phys.: Condens. Matter

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This work discusses the current situation in the study of bulk defects in diamond, grown by chemical vapour deposition (CVD), using optical absorption, luminescence, and electron spin resonance techniques. CVD diamond appears distinct from other types of diamond in that it exhibits significant concentrations of bulk defects involving hydrogen, silicon, and possibly tungsten impurities. Importantly, as regards doping, p-type conductivity up to the degeneracy level can be achieved by boron incorporation, while n-type conductivity can be realized by phosphorus doping. A generally observed trend is cross fertilization between the studies of various types of diamond: the knowledge of the properties of intrinsic and irradiation-induced defects, obtained from extensive studies of natural and high-pressure synthetic diamond crystals, helps in understanding the presence of certain radiation-damage-related centres in as-grown CVD films. In return, some achievements from the study of defect centres in CVD diamond may provide useful information for modelling of defects in crystalline diamond and other semiconducting materials.

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“…As a result, the strain hardening rate increases and more excellent overall properties are obtained [28][29] . Nanodiamond has the advantages of a low coe cient of thermal expansion, very high hardness, high thermal conductivity, low density, good wear resistance and chemical stability [30][31][32][33] . It has been shown that the addition of nanodiamond contributes to the enhancement of the mechanical properties and corrosion resistance of the alloy [34] , so nanodiamond was chosen as the reinforcing phase of the high-entropy alloy in this work.…”

Section: Introductionmentioning

confidence: 99%

Hot oscillating pressing sintered AlCoCrFeNi/nanodiamond high-entropy alloy composites

Gao,

Wu,

Ren

et al. 2023

Preprint

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In this work, AlCoCrFeNi/nanodiamond high-entropy alloy composites (HEA/diamond) were prepared for the first time by hot oscillating pressing (HOP) using nanodiamond as the reinforcing phase, and the evolution of microstructure and properties at different sintering temperatures were investigated. The microstructures of the HOPed HEA/diamond high-entropy alloy composites all consisted of the FCC phase, BCC phase and nanocarbide phase uniformly distributed in the interstices of the particles. With the increase in sintering temperature, the original powder particle boundaries in the composites gradually disappeared, the density progressively increased, and the microstructure defects decreased. At 1100°C, the dense density of the material reached its maximum, 99.7%. Moreover, the FCC phase volume fraction and carbide content further increased without significant microstructure coarsening. The hardness and corrosion resistance of the HOPed samples were better than the hot pressing (HP) samples at the same sintering temperature. Especially at lower sintering temperatures (1000°C and below), the microstructure uniformity of the composite material was significantly improved because the original particle boundaries and pores became smaller, and a small number of nanocarbides were uniformly distributed in the powder interstices. The performance of HEA/diamond was greatly enhanced by the carbide pinned reinforcement. The hardness reached a maximum of 566.48 HV1, and the corrosion current density and corrosion rate reached a minimum of 2.916 µm/cm2 and 0.013 mm/year, respectively, which was better than other alloys reported. However, at high temperatures (at 1100°C), the performance decreased due to a large amount of graphitization of diamond to generate carbides, which weakened the interfacial bonding. The results showed that high-density, high-performance HEA/diamond composites could be obtained by HOP at appropriate sintering temperatures.

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Properties of diffused diamond films with n-type conductivity

Cited by 34 publications

References 6 publications

Theoretical models for doping diamond for semiconductor applications

Theoretical models for doping diamond for semiconductor applications

Chemical vapour deposition diamond studied by optical and electron spin resonance techniques

Hot oscillating pressing sintered AlCoCrFeNi/nanodiamond high-entropy alloy composites

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