Chemical vapour deposition diamond studied by optical and electron spin resonance techniques

Abstract

This work discusses the current situation in the study of bulk defects in diamond, grown by chemical vapour deposition (CVD), using optical absorption, luminescence, and electron spin resonance techniques. CVD diamond appears distinct from other types of diamond in that it exhibits significant concentrations of bulk defects involving hydrogen, silicon, and possibly tungsten impurities. Importantly, as regards doping, p-type conductivity up to the degeneracy level can be achieved by boron incorporation, while n-type conductivity can be realized by phosphorus doping. A generally observed trend is cross fertilization between the studies of various types of diamond: the knowledge of the properties of intrinsic and irradiation-induced defects, obtained from extensive studies of natural and high-pressure synthetic diamond crystals, helps in understanding the presence of certain radiation-damage-related centres in as-grown CVD films. In return, some achievements from the study of defect centres in CVD diamond may provide useful information for modelling of defects in crystalline diamond and other semiconducting materials.

An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation

“…Of course, the annealing is unavoidable to mobilize the vacancies, but a temperature should be chosen in the range where the V 2 also becomes mobile, while NV yet does not. Much of the literature shows that V 2 starts to anneal out from 800 • C, where NV is not yet mobile [48,49]. As a result, the annealing temperature was selected to be around 1000 • C, which is shown in Figure 4.…”

Recent advances in superconductivity of covalent superconductors

“…In this method, called spontaneous HPHT (highpressure high-temperature) synthesis, rapid crystallization increases the uptake of boron, but it also results in relatively poor sample quality. Higher lattice perfection and better control over the doping are achieved when diamond films are grown on diamond substrates (homoepitaxy) using chemical vapor deposition (CVD) [11][12][13][14]. As a result, the initial value of T C = 4 K was quickly raised to 11.4 K [3,15] in CVD films.…”

Nonlinear behavior of current‐dependent emission for diamond light‐emitting diodes

“…Broadband emissions were also observed at 300–600 nm, originating from trapping and recombination via deep levels due to defects and/or impurities. Unfortunately, the spectral shapes of deep‐level emissions become broad at RT, and the origin of these deep‐level emissions has not yet been clarified, although 350‐nm band emission is often observed by cathodoluminescence of B‐doped 7 and (001)‐oriented P‐doped diamond thin films 8, and the emissions related to nitrogen (N)–vacancy (V) complexed defects 9, such as 575‐nm N + –V center, etc., are well known as emissions in the visible region. A‐band luminescence is also known as a broad visible emission.…”