Properties of CuInSe2 films obtained by methods of selenization and quasi-equilibrium deposition

Gadzhiev, T. M.; Babaev, A. A.; Gadzhieva, R. M.; Magomedova, Dzh. Kh.; Khokhlachev, P. P.

doi:10.1134/s0020168508120066

Cited by 10 publications

(5 citation statements)

References 3 publications

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“…Given the lighter effective mass of the electron we can assume that the TA is mostly monitoring its movement to a new state. 69 In this case the energy gap corresponds well with the difference in conduction energy levels and In Cu 2+ antisite defects, which are known electron traps. Species C and D have nearly the same half-width at half-maximum (HWHM), suggesting the same population moving together to a slightly lower energy state.…”

Section: Resultsmentioning

confidence: 70%

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Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals

Harvey

Houck

et al. 2021

ACS Nano

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CuInSe2 nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe2 nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.

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Section: Resultsmentioning

confidence: 70%

“…State C is approximately 15–60 meV below that of Species B. Given the lighter effective mass of the electron we can assume that the TA is mostly monitoring its movement to a new state . In this case the energy gap corresponds well with the difference in conduction energy levels and In Cu 2+ antisite defects, which are known electron traps.…”

Section: Resultsmentioning

confidence: 99%

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals

Harvey

Houck

et al. 2021

ACS Nano

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“…To our knowledge, effective mass and dielectric constant for CuIn 7 Se 11 have yet to be reported. However, if we assume them to be similar to that of CuInSe 2 ( m * = 0.09 m 0 and ε = 15.8ε 0 ), r s > 1 can be satisfied at lower critical density, n C ∼ 10 12 . The critical density for CuIn 7 Se 11 is almost an order of magnitude less than that of MoS 2 , thus indicating the possibility of metal–insulator transition in the presence of conventional SiO 2 dielectric gate.…”

Section: Resultsmentioning

confidence: 99%

“…Here, m* -effective electron mass in units of the free electron mass (me), nC -critical charge density, † -average value of nC over a temperature range of 20 K < T < 300 K, # -p-type transport with graphene contact, ionic liquid on top, Φ -quantum phase transition, Λ -to our knowledge effective mass for CuIn7Se11 has yet to be reported so we have used effective mass of CuInSe2. 13…”

Section: Density Of Trap Statesmentioning

confidence: 99%

Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

et al. 2019

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I. Y-function Method for estimating contact resistance. Y-function method, as first demonstrated by Ghibaudo 1 and modified by Chang et.al, 2 to include gate dependent Schottky barrier, was used to evaluate low-field mobility (μ0) and estimate effective contact resistance (RC) in strong inversion region (Vg >> Vd). Detailed derivation of Yfunction method can be found in ref 2. For low-field bias condition (Vg >> 0.5Vd), drain current can be writes as Equation S.I.1, (S.I.1) where all symbols carry their usual meaning and θ is effective attenuation factor, express as θ = θ0 + μ0.RC.Cox.W/L and θ0 is first-order mobility attenuation coefficient. In general case, Y-function, which is defined as Id/√gm (gm is transconductance, ∂Id/∂Vg) is given by Equation S.I.2,

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“…[14], in CuInSe2 films the localization lengths of the electrons near Ef are a ≈ 2 nm. Assuming a = 2 nm for CuInSe2-ZnIn2Se4 solid solutions, and using Eq.…”

Section: Temperature Dependent Conductivitymentioning

confidence: 98%

Growth and Analysis of Nanostructured CuInSe2-ZnIn2Se4 Solid Solutions: Their Electrical and Photoelectrical Properties

Божко

Новосад

Parasyuk

et al. 2015

Materials Today: Proceedings

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Properties of CuInSe2 films obtained by methods of selenization and quasi-equilibrium deposition

Cited by 10 publications

References 3 publications

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals

Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Growth and Analysis of Nanostructured CuInSe2-ZnIn2Se4 Solid Solutions: Their Electrical and Photoelectrical Properties

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Properties of CuInSe2 films obtained by methods of selenization and quasi-equilibrium deposition

Cited by 10 publications

References 3 publications

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2 Nanocrystals

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2 Nanocrystals

Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Growth and Analysis of Nanostructured CuInSe2-ZnIn2Se4 Solid Solutions: Their Electrical and Photoelectrical Properties

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Product

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Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe₂ Nanocrystals