Properties of Cu2ZnSn(SxSe1−x)4 thin films prepared by one-step sulfo-selenization of alloyed metal precursors

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

“…Previous reports made on CZTSSe films indicated that more S content in the structure results in a shift to higher wavenumbers in the peak positions of the main characteristic Raman peaks of pure CZTSe structure 45‐47 . In our study, it is clearly seen that all peaks observed in the Raman spectra of both films belong to the CZTSe structure.…”

Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

“…7). Raman peaks corresponding to Se anion were observed at 204e216 cm À1 and corresponding to S anion were observed at 326e330 cm À1 in CZTSSe thin films [3,43,44]. The shift in the main characteristic Raman peak is due to the incorporation of Se, which changes the bonding between atoms because of differences in the size.…”

Single step electrochemical deposition for the fabrication of CZTS kesterite thin films for solar cells

“…The optimum direct band gaps, outstanding features and efficient performance of these kesterite materials made them very fascinating in the thin film's community. Several techniques have been used to synthesize the 𝐶𝑍𝑇𝑆 kesterite thin films like spin coating [11], sol-gel [12], electrochemical deposition [13], spray pyrolysis [14], doctor-blade coating [15], co-sputtering [16,17], chemical bath deposition [18], SILAR [19], photochemical deposition [20]. The highest power conversion efficiency (𝑃𝐶𝐸) achieved for 𝑆𝑒 rich 𝐶𝑍𝑇𝑆𝑆𝑒 based solar cell was 12.6% prepared by hydrazine-based solution deposition process [21] intensive care should be taken while handling hydrazine using proper protective equipment and this add to the cost of solar cell fabrication.…”