“…The average crystallite size of CZTS-Li, CZTS-Cr, CZTS-Sb, and CZTS-Na was 32, 37, 41, and 49 nm, respectively. These results agree well with those reported earlier 19,20 . The lattice parameters of the CZTS films doped with different metal ions are summarized in Table 1.…”
Section: F I G U R E 2 X-ray Diffraction (Xrd) Of the Cu 2 Znsns 4 (Csupporting
Summary
In the present study, kesterite films were synthesized by sulfurization of co‐electrodeposited Cu2ZnSnS4 (CZTS) precursor, focusing on the effect of different metals (Li, Na, Sb, and Cr) on the CZTS thin films' properties. The structural, morphological, electrical and optical properties of the films were investigated. We demonstrated the deposition of four different metals using spin‐coating on co‐electrodeposited thin films. X‐ray diffraction (XRD) confirmed the kieserite phase with major intense peaks corresponding to the (112), (200), (312) and (332) planes with improvement in crystallinity after doping. Raman spectroscopy indicated the presence of a pure kesterite phase with a minor amount of impurities in the Na‐doped CZTS thin film. FE‐SEM analyses showed smooth, compact, and uniform surface morphology with fewer holes and cracks and well‐defined boundaries between the submicron particles and adherent layer cross section. An energy gap absorption edge ranging from 1.56 eV to 1.71 eV was calculated from the absorption measurements, while improvements in the energy gab were observed depending on the doping metal. The absorption coefficient was higher than 104 cm−1 in the visible spectrum of light. The performance of the solar cell with a device configuration of Glass/Mo/CZTS/CdS/i‐ZnO/ZnO: Al/Ag under simulated AM 1.5 was reported. The presence of different dopants increased the average efficiency from 1.74% ± 0.4 to 3.47% ± 0.3. Upon Na doping, solar cell device demonstrated as high‐performance efficiency as 3.47%, featuring open‐circuit voltage Voc = 343 mV, short‐circuit current density Jsc =12.55 mA/cm2, and a fill factor FF = 69.1.
“…The average crystallite size of CZTS-Li, CZTS-Cr, CZTS-Sb, and CZTS-Na was 32, 37, 41, and 49 nm, respectively. These results agree well with those reported earlier 19,20 . The lattice parameters of the CZTS films doped with different metal ions are summarized in Table 1.…”
Section: F I G U R E 2 X-ray Diffraction (Xrd) Of the Cu 2 Znsns 4 (Csupporting
Summary
In the present study, kesterite films were synthesized by sulfurization of co‐electrodeposited Cu2ZnSnS4 (CZTS) precursor, focusing on the effect of different metals (Li, Na, Sb, and Cr) on the CZTS thin films' properties. The structural, morphological, electrical and optical properties of the films were investigated. We demonstrated the deposition of four different metals using spin‐coating on co‐electrodeposited thin films. X‐ray diffraction (XRD) confirmed the kieserite phase with major intense peaks corresponding to the (112), (200), (312) and (332) planes with improvement in crystallinity after doping. Raman spectroscopy indicated the presence of a pure kesterite phase with a minor amount of impurities in the Na‐doped CZTS thin film. FE‐SEM analyses showed smooth, compact, and uniform surface morphology with fewer holes and cracks and well‐defined boundaries between the submicron particles and adherent layer cross section. An energy gap absorption edge ranging from 1.56 eV to 1.71 eV was calculated from the absorption measurements, while improvements in the energy gab were observed depending on the doping metal. The absorption coefficient was higher than 104 cm−1 in the visible spectrum of light. The performance of the solar cell with a device configuration of Glass/Mo/CZTS/CdS/i‐ZnO/ZnO: Al/Ag under simulated AM 1.5 was reported. The presence of different dopants increased the average efficiency from 1.74% ± 0.4 to 3.47% ± 0.3. Upon Na doping, solar cell device demonstrated as high‐performance efficiency as 3.47%, featuring open‐circuit voltage Voc = 343 mV, short‐circuit current density Jsc =12.55 mA/cm2, and a fill factor FF = 69.1.
“…Several non-vacuum techniques like sol-gel, electrodeposition, solution-based method etc. have been widely studied to fabricate Kesterites thin films [13][14][15].…”
Earth-abundant and non-toxic Kesterite-based Cu2ZnSnS4 (CZTS) thin film solar cells are successfully fabricated on flexible Molybdenum (Mo) foil substrates by an electrodeposition-annealing route. A well-adherent, densely packed, homogeneous, compact, and mirror-like CZT precursor is initially produced through electrodeposition by using a rotating working electrode. Subsequently, the co-electrodeposited CuZnSn (CZT) precursor is sulfurized in quartz tube furnace at 550 °C for 2 h in N2 atmosphere with the presence of elemental sulfur in order to form CZTS. Different characterization techniques like XRD, SEM, HR-TEM, Raman, and Photoluminescence demonstrate that almost phase-pure CZTS formed after sulfurization. A flexible Al/Al-ZnO/i-ZnO/CdS/CZTS/Mo foil solar cell is produced, where CdS is deposited by chemical bath deposition and transparent conducting oxide (TCO) is deposited by DC sputtering. The CZTS solar device shows a 0.55% power conversion efficiency on flexible Mo foil substrate and it constitutes the first prototype of this kind of solar cell produced by electrodeposition-annealing route without any surface modification of the Mo substrate.
Graphic abstract
“…Next, an exhibition of the main characteristics of PV cells with electrical modeling will also be explained in detail. Then, an overview of the The third article presented in this thesis is titled "Single step electrochemical deposition for the fabrication of kesterite thin films for solar cells" [6]. This article is published in "Applied surface science" 1 journal, the impact factor of the latter is of the order of 6 reduce costs for photovoltaic cells to be used for terrestrial applications [8,9].…”
Section: Structure Of Thesismentioning
confidence: 99%
“…having kesterite symmetrical structures are emerging as the most auspicious replacement for the chalcopyrite absorbers [49,[150][151][152][153][154][155]. The outstanding features and efficient performance of these kesterite based materials made them very fascinating in the thin film research community [6,156]. In CIGS absorber substituting indium (In) with zinc (Zn) and gallium (Ga) with tin (Sn), CZTS is considered as a perfect light absorber material having a large absorption coefficient of α >10 4 cm −1 [157][158][159][160] and direct optical bandgap ranges among 1.4eV to 1.5eV [73,114,115,158].…”
Section: Introductionmentioning
confidence: 99%
“…6 shows the instrument used for scanning electron microscopy analyzes (SEM) that is Zeiss ULTRA 55 model equipped with a field emission cannon 30 kV. Then, all of the data collected is used by visualization software Image.…”
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