Properties of carbon nitride films with composition ratio <i>C</i>/<i>N</i>=0.5–3.0 prepared by the ion and vapor deposition method

Ogata, Kiyoshi; Chubaci, J.F.D.; Fujimoto, F.

doi:10.1063/1.358497

Cited by 195 publications

(56 citation statements)

References 13 publications

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“…This peculiarity attributed to the olefinic CϭC stretching mode. 23, 24 Also we observed that I(D)/I(G) increases and indicates that the film have still sufficiently content of sixfold aromatic rings. Thus, in these films the transformation of the aromatic rings to the olefinic groups 19 …”

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confidence: 56%

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits

Valakh

Shanina

et al. 2003

Journal of Applied Physics

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Electron spin resonance ͑ESR͒ and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5 ϫ10 15 to 1.2ϫ10 16 cm Ϫ2 . The as-grown films have small concentration of paramagnetic centers with a spin density N s of 10 17 cm Ϫ3 . Upon implantation a significant increase in N s of (0.5-22) ϫ1019 cm Ϫ3 centers with g (Si) ϭ2.0055 and g (C) ϭ2.0025 was observed. These defects are ascribed to dangling bonds in the silicon substrate and in the carbon film, respectively. The correlation between variation of N s value with implantation dose and behavior of D and G band position and their intensity ratio in the visible Raman spectra is observed. The effects are attributed to changes in the sp 2 -sp 3 systems and hydrogen loss due to ion induced annealing of the carbon films at high ion doses. The temperature and concentration dependencies of the ESR line shape and linewidth are explained using the mechanism of motional narrowing over the temperature range 4.2-300 K. Low temperature anisotropy of the g value is found in the ESR spectra and is explained as arising from the dipole-dipole interaction in the infinitely thin films.

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confidence: 56%

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits

Valakh

Shanina

et al. 2003

Journal of Applied Physics

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“…[17] Fujimoto et al reported on the formation of nitrogen rich C±N materials by using 0.5±10.0 keV N ion beam. [18,19] A new approach based on bias-assisted hot filament CVD (bias-HFCVD) was recently used in our group to grow C±N thin films. [20,21] The application of a bias is to break the N 2 bond, which is very stable and forms readily in an atomic N ambience in a general hot filament CVD.…”

Section: Fabrication Of C±n Filmsmentioning

confidence: 99%

“…An optical bandgap of 2.7 eV was determined by Ogata et al using UV transmission spectroscopy for a nitrogenrich C±N film. [19] Another study presented an optical bandgap of 3.81 eV for a crystalline C±N film with a small amount of silicon. [33] Large-area field emission has been observed from thin C±N films.…”

Section: Physical and Chemical Propertiesmentioning

confidence: 99%

A New Development in Covalently Bonded Carbon Nitride and Related Materials

Wang¹

1999

Adv. Mater.

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A large amount of work world-wide has been directed towards the understanding of covalently bonded materials made from elements of the first row of the periodic table because of their potentially useful mechanical, electrical, and thermal properties. Progress has been made following the initial work by Cohen in 1985, in which covalently bonded carbon nitride was predicted to be as hard as diamond. This review surveys recent work that has been carried out in this area, with a focus on the level of understanding that has been attained in the research of carbon nitride and related materials.

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“…Several groups have tried various techniques to synthesize this structure. Some of the attempted methods include ion-beam assisted deposition [2], reactive RFmagnetron sputtering [3,4], electron cyclotron resonance plasma deposition [5], ion implantation into carbon films [6], e-beam evaporation of carbon with concurrent nitrogen ion bombardment [7], pulsed laser deposition (PLD) into a background gas of nitrogen [& 91, PLD with an atomic nitrogen beam source[ 101, PLD with a radio frequency (RF) plasma assist [S], and ion-assisted…”

Section: Introductionmentioning

confidence: 99%

Characterization of Carbon Nitride Films Produced by Pulsed Laser Deposition

et al. 1995

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Carbon Nitride (CN,) films have been grown by ion-assisted pulsed-laser deposition (IAPLD). Graphite targets were laser ablated while bombarding the substrate with ions from a broad-beam Kaufman-type ion source. The ion voltage, current density, substrate temperature, and feed gas composition (N2 in Ar) have been varied. The resultant films were characterized by Raman, Fourier transform infrared (FTIR), and Rutherford back scattering (RB S) spectroscopy.Samples with -30% N/C ratio have been fabricated. The corresponding Raman and FTIR spectra indicate that nitrogen is incorporated into the samples by insertion into sp2-bonded structures. A low level of C=N triple bonds is also found. As the ion current and voltage are increased with a pure Ar ion beam, Raman peaks associated with nanocrystalline graphite appear in the spectra. Adding low levels of nitrogen to the ion beam first reduces the Raman intensity in the vicinity of the graphite disorder peak without adding detectable amounts of nitrogen to the films (as measured by RBS). At higher nitrogen levels in the ion beam, significant amounts of nitrogen are incorporated into the samples, and the magnitude of the "disorder" peak increases. By increasing the temperature of the substrate during deposition, the broad peak due mainly to sp2-bonded C-N in the FTIR spectra is shifted to lower wavenumber. This could be interpreted as evidence of single-bonded C-N; however, it is more likely that the character of the sp2 bonding is changing.

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Properties of carbon nitride films with composition ratio C/N=0.5–3.0 prepared by the ion and vapor deposition method

Cited by 195 publications

References 13 publications

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

A New Development in Covalently Bonded Carbon Nitride and Related Materials

Characterization of Carbon Nitride Films Produced by Pulsed Laser Deposition

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