Properties of bulk polycrystalline CVD diamond

Sussmann, R.S.; Brandon, J.; Scarsbrook, G. A.; Sweeney, Charles G.; Valentine, T.J.; Whitehead, Andrew L.; Wort, C. J. H.

doi:10.1016/0925-9635(94)90176-7

Cited by 93 publications

(28 citation statements)

References 5 publications

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“…We have successfully fabricated high-quality polycrystalline diamond and reported that, in a diamond radiation sensor, irradiation with 5.48-MeV alpha particles resulted in a wellresolved particle peak with a high charge collection efficiency of 15% [8], [9]. Here, using our high-quality polycrystalline diamond film, we report significant progress in fabricating FETs.…”

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confidence: 74%

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

Ueda

Kasu

Yamauchi

et al. 2006

IEEE Electron Device Lett.

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Using high-quality polycrystalline chemical-vapordeposited diamond films with large grains (∼ 100 µm), field effect transistors (FETs) with gate lengths of 0.1 µm were fabricated. From the RF characteristics, the maximum transition frequency f T and the maximum frequency of oscillation f max were ∼ 45 and ∼ 120 GHz, respectively. The f T and f max values are much higher than the highest values for singlecrystalline diamond FETs. The dc characteristics of the FET showed a drain-current density I DS of 550 mA/mm at gate-source voltage V GS of −3.5 V and a maximum transconductance g m of 143 mS/mm at drain voltage V DS of −8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.Index Terms-Field effect transistor (FET), hydrogen terminated, polycrystalline diamond, RF performance.

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confidence: 74%

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

Ueda

Kasu

Yamauchi

et al. 2006

IEEE Electron Device Lett.

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254

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“…Table 1: Relevant physical properties of diamond and sand. The data for the silica sand are taken from Telling and Field [7] and Shipway and Hutchings [14] while the data for diamond are taken from Sussmann et al [15]. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 Table 7: Values of α and β parameters for a number of particle and target combinations.…”

Section: Discussionmentioning

confidence: 99%

“…The thickness range of the diamond films were between 33 µm and 90 µm. The coated specimens were 50 mm diameter and 6 mm thick and were tested in the as-received Figure 1 shows an electron micrograph of an untested diamond coating while Table 1 lists the relevant properties of the coatings [7,14,15].…”

Section: Methodsmentioning

confidence: 99%

Fracture of diamond coatings by high velocity sand erosion

Wheeler

Wood

2009

Philosophical Magazine

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“…Substrate properties (e.g. dielectric constant 1 R ¼ 5.7 and loss tangent smaller than 10 25 from the literature [9]) and contact metallisation conductivity make the software able to simulate impedance matching and electrical lengths, suggesting compromises between contact thickness and waveguide length. Coplanar waveguides, according to a measurement setup equipped with ground-signal-ground (GSG) probes with 200 mm pitch, result in a median conductor strip of 106 mm width separated from two ground guides, of 210 mm width, by a gap of 20 mm: software simulation guarantees 50 V impedance.…”

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confidence: 99%