Properties of Ammonothermal Crystals

FreitasJr., J. A.; Zając, M.

doi:10.1007/978-3-030-56305-9_16

Springer Series in Materials Science

2021

DOI: 10.1007/978-3-030-56305-9_16

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Properties of Ammonothermal Crystals

J. A. FreitasJr.

M. Zając

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Cited by 2 publications

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“…Most bright LEDs are based on group III–V semiconductors or their alloys. Indeed, there are several reported studies of complex semiconductors belonging to the III–V family consisting of elements of group III (B, Al, Ga, and In) and group V (N, P, As, and Sb). − In particular, III–N alloys exhibit an ultrawide band gap due to the quantum confinement effect . Therefore, III–N alloys find applications in blue LEDs and ultraviolet optoelectronic devices − and in high-power electronic devices .…”

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Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Stratulat,

Tantardini,

Azizi

et al. 2023

J. Phys. Chem. Lett.

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We propose the Zn2V(1–x)Nb x N3 alloy as a new promising material for optoelectronic applications, in particular for light-emitting diodes (LEDs). We perform accurate electronic-structure calculations of the alloy for several concentrations x using density-functional theory with meta-GGA exchange–correlation functional TB09. The band gap is found to vary between 2.2 and 2.9 eV with varying V/Nb concentration. This range is suitable for developing bright LEDs with tunable band gap as potential replacements for the more expensive Ga(1–x)In(x)N systems. Effects of configurational disorder are taken into account by explicitly considering all possible distributions of the metal ions within the metal sublattice for the chosen supercells. We have evaluated the band gap’s nonlinear behavior (bowing) with variation of V/Nb concentration for two possible scenarios: (i) only the structure with the lowest total energy is present at each concentration and (ii) the structure with minimum band gap is present at each concentration, which corresponds to experimental conditions when also metastable structures are presents. We found that the bowing is about twice larger in the latter case. However, in both cases, the bowing parameter is found to be lower than 1 eV, which is about twice smaller than that in the widely used Ga(1–x)In(x)N alloy. Furthermore, we found that both crystal volume changes due to alloying and local effects (atomic relaxation and the V–N/Nb–N bonding difference) have important contributions to the band gap bowing in Zn2V(1–x)Nb x N3.

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mentioning

confidence: 99%

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Stratulat,

Tantardini,

Azizi

et al. 2023

J. Phys. Chem. Lett.

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Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

2022

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GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a variety of high power, high frequency, high temperature, and optical applications. The major roadblock for the full realization of Nitride semiconductor potential is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapor phase epitaxy and ammonothermal for GaN growth, much more must be attained before establishing a fully satisfactory bulk growth method for this material. Recent results suggest that ammonothermal GaN wafers can be successfully used as seeds to grow thick freestanding GaN wafers by hydride vapor phase epitaxy. A brief review of defect-sensitive optical and paramagnetic spectroscopy techniques employed to evaluate structural, optical, and electronic properties of the state-of-the-art bulk and thick-film (quasi-bulk) Nitride substrates and homoepitaxial films is presented. Defects control the performance of devices and feeding back knowledge of defects to growth efforts is key to advancing technology.

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Properties of Ammonothermal Crystals

Cited by 2 publications

References 95 publications

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

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Properties of Ammonothermal Crystals

Cited by 2 publications

References 95 publications

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

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Product

Resources

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Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes