Properties of aluminum titanate films prepared by chemical vapor deposition under different aluminum butoxide inputs

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

“…The optical transmittance of about 80 % was noticed in low pressure chemical vapor deposited and International Letters of Chemistry, Physics and Astronomy Vol. 61sputter deposited AlTiO films [9][10][11]. Fundamental absorption edge shifted to higher wavelength side with annealing temperature.…”

“…Among these materials, aluminum titanate(Al 2 TiO 5 ) is a high-k dielectric with good radio frequency performance. Thin films of Al 2 TiO 5 have been deposited by various techniques such as thermal oxidation of Al/Ti bilayer formed by vacuum evaporation [8], reactive sputtering [9], Low pressure chemical vapor deposition [10,11], nanoparticle achieved by sol-gel process [12,13]. The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8].…”

“…The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8]. Sputter deposited Al 2 TiO 5 films are used as semitransparent silicon thin film solar cell useful for building integrated photovoltaic system [9], Low pressure chemical vapor deposition films formed were amorphous and their refractive index decreased from 1.92 to 1.78 and the dielectric constant decreased with increase of substrate temperature from 350 o C to 500 o C [10,11] respectively. Further annealing of films as temperature to 800 o C resulted the enhanced dielectric properties [11].…”

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

“…Among these materials, aluminum titanate(Al 2 TiO 5 ) is a high-k dielectric with good radio frequency performance. Thin films of Al 2 TiO 5 have been deposited by various techniques such as thermal oxidation of Al/Ti bilayer formed by vacuum evaporation [8], reactive sputtering [9], Low pressure chemical vapor deposition [10,11], nanoparticle achieved by sol-gel process [12,13]. The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8].…”

“…The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8]. Sputter deposited Al 2 TiO 5 films are used as semitransparent silicon thin film solar cell useful for building integrated photovoltaic system [9], Low pressure chemical vapor deposition films formed were amorphous and their refractive index decreased from 1.92 to 1.78 and the dielectric constant decreased with increase of substrate temperature from 350 o C to 500 o C [10,11] respectively. Further annealing of films as temperature to 800 o C resulted the enhanced dielectric properties [11].…”