Properties of a high-power field-controlled thyristor

Abstract

Nevertheless the high injection minority carrier lifetime measured by OCVD, T = 1.2 ps, i s quite Field controlled thyristors (FCTh) have been useful. realized by a recessed gate technique. Static and dynamic c h a r a c t e r i s t i c s a r e measured and compared t o t h e o r e t i c a l r e s u l t s . During turn-off a new latching mechanism i s observed which is explained in terms of a comprehensive physical model. New advanced cascode and cascade c i r c u i t s are proposed with reduced on resistance, very high current gain and fast, snubberless switching. 1 IO-IEDM 86 CH2381-2/86/O00O-0110 $1 .OO 0 1986 IEEE

Elektrische Antriebe 3

“…Diese Struktur wird in der Literatur Field Controlled Thyristor FCTh genannt [231], [296], [297], [298]. 6.3 b zurückgegangen werden und eine Mesa-Struktur nach Abb.…”

MOS trench gate field-controlled thyristor

“…Previously reported field-controlled thyristors (FCI') util �e the p-n junction gate to control the turn-off of the p-i-n diodes [5][6][7][8][9][10]. Current interruption is achieved by diverting minority carriers into the gate region, thus causing a high turn-off gate current (see Fig.…”

“…1). Furthermore, a parasitic thyristor is included in these structur� [9,10] which could lead to an unwanted turn-on of thyristor action. In this paper, a new device structure for a field-controlled thyristor utilizing MOS trench gates (UMOS) to control the current between the anode and cathode regions is described.…”