Properties and mechanism study of SnO2 nanocrystals for H2S thick-film sensors

Liu, H.; Gong, Shuping; Hu, Yunxiang; Liu, J.Q.; Zhou, Dongxiang

doi:10.1016/j.snb.2009.04.027

Cited by 116 publications

(55 citation statements)

References 29 publications

(30 reference statements)

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“…Both sensors showed similar responses; that is, their resistance decreased upon exposure to H 2 S gas and then normalized when M a n u s c r i p t H 2 S was turned off. The results agree with the typical sensing characteristics of n-type semiconductor gas sensors upon exposure to a reducing gas [11]. The R a /R g of the bare SnO 2 thin film sensor increased as the operating temperature increased from 250 °C to 400 °C.…”

Section: Resultssupporting

confidence: 85%

See 1 more Smart Citation

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

Toàn

Chien

Duy

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 85%

“…However, bare materials do not exhibit a high sensitivity to H 2 S gas [11]. Doping of p-type and/or noble metals to n-type metal oxide semiconductors has been recently reported to significantly enhance the H 2 S sensing characteristics of such bare materials [12,13].…”

Section: Introductionmentioning

confidence: 99%

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

Toàn

Chien

Duy

et al. 2015

Applied Surface Science

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“…This topic was so attractive to the researchers that plenty of investigations were carried out, promoting the development of new gas sensors in the last several decades. The technologies of thick film, thin film, and nanotechnique were introduced to fabricate semiconductor gas sensors, which were in various structures, made of different materials and involving various sensing mechanisms [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

Liu

Cui

et al. 2016

Appl. Phys. A

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The effects of depletion layer width on the semiconductor gas sensors were investigated based on the gradient-distributed oxygen vacancy model, which provided numerical descriptions for the sensor properties. The potential barrier height, sensor resistance, and response to target gases were simulated to reveal their dependences on the depletion layer width. According to the simulation, it was possible to improve the sensor response by enlarging the width of depletion layer without changing the resistance of the gas sensor under the special circumstance. The different performances between resistance and response could provide a bright expectation that the design and fabrication of gas sensing devices could be economized. The simulation results were validated by the experimental performances of SnO 2 thin film gas sensors, which were prepared by the sol-gel technique. The dependences of sensor properties on depletion layer width were observed to be in agreement with the simulations.

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“…Liu et al (2009) reported that SnO 2 nanoparticles (*50 nm) obtained via gel combustion method exhibit a better gas-sensing properties in comparison to SnO 2 nanoparticles (12-13 nm) prepared via hydrothermal method. According to the authors, the smaller particles hamper the gas diffusion process inside the sample and weaken the gas sensor performance (Liu et al 2009). Our results are thus in good agreement with the results presented in the literature.…”

Section: Characterization Techniquesmentioning

confidence: 99%

An investigation into the influence of zinc precursor on the microstructural, photoluminescence, and gas-sensing properties of ZnO nanoparticles

Catto

Silva

Bernardi³

et al. 2014

J Nanopart Res

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This paper describes the effect of different zinc precursors, acetate, oxide, and nitrate, on the structure, microstructure, photoluminescence, and ozone gas-sensing properties of zinc oxide (ZnO) nanoparticles. Transmission and scanning electron microscopy, and BET surface area show a dependence of the particle size and surface area with the precursor type. The ZnO sample synthesized from zinc nitrate shows the best photoluminescence (PL) emission. Although electron paramagnetic resonance shows in all samples the presence of a g-signal attributed to oxygen vacancies, it is not possible to correlate the presence of these defects with PL emission behavior. Furthermore, ZnO sample synthesized from zinc nitrate also shows the best ozone gas-sensing response, however, our results do not allow correlating the best PL emission in the visible region with the best sensor response to ozone gas.

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Properties and mechanism study of SnO2 nanocrystals for H2S thick-film sensors

Cited by 116 publications

References 29 publications

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

An investigation into the influence of zinc precursor on the microstructural, photoluminescence, and gas-sensing properties of ZnO nanoparticles

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