Properties and Applications of Varistor–Transistor Hybrid Devices

Pandey, R. K.; Stapleton, William A.; Sutanto, Ivan; Scantlin, Amanda A.; Lin, Sidney

doi:10.1007/s11664-014-3067-8

Cited by 9 publications

(6 citation statements)

References 17 publications

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“…IHC 45 is a stable high temperature material with excellent semiconducting properties up to 700 • C. From the temperature dependence of the electrical resistivity, the band gap of bulk ceramic IHC 45 is determined to be 2.28 eV which is comparable to the values reported in literature for other iron titanates [14]. It is strongly ferrimagnetic with room temperature saturation magnetization, M s ≈ 19.4 emu/g, coercivity, H c ≈ 250 Oe, and the Curie temperature at 610 K [10].…”

Section: Relevant Properties Of Substrate Materialssupporting

confidence: 73%

“…Detailed results pertaining to transconductance, signal amplification and potential applications are summarized in Table 1 for both varistors and their embedded transistors discussed under the two cases. In a separate paper we have reported the frequency response of the devices similar to the ones discussed in this section [14]. The bandwidth for varistor was found to be 780 kHz while it was 310 kHz for the embedded transistor resulting into the conclusion that both varistors and transistors would perform well as a low pass filter [14].…”

Section: Case Ii: Three Terminal Varistor: Device and Its Embedded Tr...mentioning

confidence: 87%

“…The 4-point resistivity measurements at room temperature gave a value of 2.28 •cm; and the value for the Seebeck coefficient, κ = +170µV • K −1 [14]. The positive sign of the Seebeck coefficient points to the p-type nature of IHC 45.…”

Section: Sample Processingmentioning

confidence: 97%

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Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

Pandey

Stapleton

Sutanto

2015

IEEE J. Electron Devices Soc.

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An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a biasing voltage (V b ). This leads to the formation of a hybrid device consisting of a biased varistor and transistor. The studies were done under two experimental conditions; first, when the ratio between the drain current (I d ) and the bias current (I b ) is of the order of 10 3 or more, and second when it is less than 10 2 . The transistors embedded in the hybrid device exhibit the typical attributes of a conventional transistor. The transistors are analogous to the well-established bipolar junction transistors and yet different because they are based on different physical principles. These transistors can meet the requirements of many general purpose applications and can also function satisfactorily as low-pass filters. The specialized applications could be under hazardous conditions such as at high temperatures, in radiation-filled environments such as outer space, and possibly in bio systems. The biased varistor assumes the property of mutual conductance like a transistor as well as becomes a good signal amplifier.

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Section: Relevant Properties Of Substrate Materialssupporting

confidence: 73%

Section: Case Ii: Three Terminal Varistor: Device and Its Embedded Tr...mentioning

confidence: 87%

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Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

Pandey

Stapleton

Sutanto

2015

IEEE J. Electron Devices Soc.

Self Cite

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“…The obtained value of the nonlinearity coefficient α = R R di f f = (V/I) (dI/dV) −1 [52] in case of FAT junction is around 1.5(1) at 300 K and increases to 2.0(1) at 5 K and does not show variation with magnetic field or measurements geometry. The switching voltage between passive and active state, i.e., a voltage for which a strong deviation from linear I-V dependence occurs, is around 0.6 V. Similar values of nonlinearity coefficient and switching voltage were found for iron titanites, such as mixtures of hematite-ilmenite with semiconducting properties [51,53]. Therefore, it can be expected that the varistor-like properties in FAT sample might be a result of the intermixing and formation of Fe-Ti-O oxide barrier at the interface between AFeO and top Ti layer.…”

Section: Electrical Transport Propertiessupporting

confidence: 68%

Electrical Transport and Magnetic Properties of Metal/Metal Oxide/Metal Junctions Based on Anodized Metal Oxides

et al. 2021

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In this paper, we describe magnetoelectric properties of metal/metal-oxide/metal junctions based on anodized metal oxides. Specifically, we use Ti and Fe metallic layers separated by the porous metal-oxides of iron or titanium formed by the anodization method. Thus, we prepare double junctions with at least one ferromagnetic layer and measure magnetoresistance, as well as their current-voltage and magnetic characteristics. We find that magnetoresistance depends on that junction composition and discuss the nature of differential resistance calculated from I-V characteristics. Our findings show that a top metallic layer and the interface between this layer and anodized oxide, where strong interatomic diffusion is expected, have the strongest influence on this observed behavior.

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“…The switching voltage between passive and active state, i.e. a voltage for which a strong deviation from linear I-V dependence occurs, is around 0.6 V. Similar values of nonlinearity coefficient and switching voltage were found for iron titanites, such as mixtures of hematite-ilmenite with semiconducting properties [50,52]. Therefore it can be expected that the varistor-like properties in FAT sample might be a result of the intermixing and formation of Fe-Ti-O oxide barrier at the interface between AFeO and top Ti layer.…”

Section: Electrical Transport Propertiesmentioning

confidence: 53%

Electrical Transport and Magnetic Properties of Metal/Metal Oxide/Metal Junctions Based on Anodized Metal Oxides

Zarzycki

Chojenka

Perzanowski

et al. 2021

Preprint

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In this paper we present magnetoelectric properties of metal/metal-oxide/metal junctions. We use Ti and Fe as metallic layers separated by the porous metal-oxides of iron or titanium formed with the anodization method. This allowed to prepare double junctions with at least one ferromagnetic layer. Here we show magnetoresistance and current-voltage characteristics of the junctions together with their magnetic characteristics. We found positive or negative magnetoresistance depending on junction composition. We discuss also the nature of differential resistance calculated from I-V characteristics. Our findings show that the strongest influence on observed behaviour has a top metallic layer and the interface between this layer and anodized oxide where strong interatomic diffusion is expected.

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Properties and Applications of Varistor–Transistor Hybrid Devices

Cited by 9 publications

References 17 publications

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

Electrical Transport and Magnetic Properties of Metal/Metal Oxide/Metal Junctions Based on Anodized Metal Oxides

Electrical Transport and Magnetic Properties of Metal/Metal Oxide/Metal Junctions Based on Anodized Metal Oxides

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