Abstract:In Si crystals, which were doped with cobalt during floating- zone growth, mainly substitutional Co defects with a concentration of about 7 x 1012 cm-3 can be detected by deep- level transient spectroscopy. But a second fundamental defect with a lower concentration around 7 x 1011 cm-3 shows features, which are typical for an interstitial defect with a remarkable mobility even at room temperature. It has a donor level at EV + 0.31 eV as well as an acceptor level at EC - 0.4 eV and is attributed to inters… Show more
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