Lattice location of implanted Co in heavily doped $$n^+$$ n + - and $$p^+$$ p + -type silicon

Silva, Daniel José da; Wahl, Ulrich; Correia, J. G.; Amorim, lmarina Pinto de Almeida; Silva, Manuel Ribeiro da; Pereira, L. M. C.; Araújo, João P.

doi:10.1007/s00339-017-0870-0

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Fig 2 Xrd Analysis Annealed At Temperature 250⁰c1

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2024

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“…It's important to note that the calculated or measured band gap of SnSe may vary depending on the method used, the level of approximation, and the specific conditions of the calculation or measurement. The band gap is calculated by using the following relation [15,16,17].…”

Section: Fig 2 Xrd Analysis Annealed At Temperature 250⁰cmentioning

confidence: 99%

The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

Jabeen,

Ali,

Ali

et al. 2024

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In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.

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Section: Fig 2 Xrd Analysis Annealed At Temperature 250⁰cmentioning

confidence: 99%