Promising ultra-short channel transistors based on OM₂S (M = Ga, In) monolayers for high performance and low power consumption

Abstract

Two-dimensional (2D) semiconductors are hoping to overcome the short channel effect and continue Moore's law. However, the 2D materials-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance...

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

“…34 Studies have shown that monolayer OM 2 S has great application prospects in ultrashort scale devices. 28 The above results indicate that monolayer films M 2 OS have shown good stability, high electron mobility, and suitable band gaps, making them promising candidates for further extending Moore's Law, and are predicted to have wide applications in optoelectronics and nanoelectronics. The vertical van der Waals heterostructure (vdWH) is currently a very popular method of constructing devices.…”

“…The optimized lattice constants of monolayer Ga 2 OS and In 2 OS are a = b = 3.367 and 3.674 Å, respectively, which are consistent with previous research results. 28,29 The projected band structures of monolayers Ga 2 OS and In 2 OS are investigated, as presented in Figure 1b,c. The results show that monolayer Ga 2 OS is a direct band gap semiconductor with a band gap of 1.39 eV, where the conduction band maximum (CBM) is mainly contributed by the Ga atom and the valence band minimum (VBM) is mainly contributed by the S atom.…”

“…Currently, various types of Janus 2D materials have been theoretically predicted, including Janus transition-metal dichalcogenides, , Janus M 2 XY (M = Ga and In; X/Y = S, Se, and Te), Janus MoSO, , and so on. Especially gallium or indium-based Janus monosulfide compounds have been explored theoretically and experimentally. − Liu et al proposed a class of Janus III group monosulfide compounds of monolayer M 2 OS (M = Ga, In) structure . They pose a low risk of environmental implications. , It is reported that the electron mobility of monolayer In 2 OS exceeds 3 × 10 3 cm 2 V –1 s –1 , , and monolayer Ga 2 OS has a direct band gap structure .…”

“…They pose a low risk of environmental implications. , It is reported that the electron mobility of monolayer In 2 OS exceeds 3 × 10 3 cm 2 V –1 s –1 , , and monolayer Ga 2 OS has a direct band gap structure . Studies have shown that monolayer OM 2 S has great application prospects in ultrashort scale devices . The above results indicate that monolayer films M 2 OS have shown good stability, high electron mobility, and suitable band gaps, making them promising candidates for further extending Moore’s Law, and are predicted to have wide applications in optoelectronics and nanoelectronics.…”

A NiCo2S4 octahedral configuration doped by Mn, Zn and Cu for the oxygen evolution reaction

“…Therefore, it is important to improve the OER performance of spinel sulfide by activating active sites and accelerating electron transmission. Many effective strategies have been carried out to enhance catalytic performance, such as dopant insertion, 5,6 defect 7,8 and heterojunction construction, [9][10][11] and surface interface regulation. 12,13 The strategy of element doping has been widely used to adjust the structure to obtain more active sites and improve electrical conductivity.…”