Ultrahigh current and ultralow power dissipation of Janus monolayer IIIA-VIA Ga2XY MOSFETs

A graphene/Janus B2P6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

“…20 Two-dimensional Janus materials greatly enhance the function of FETs due to the intrinsic built-in electric field resulting from symmetry breaking. 21–23 Furthermore, the low power delay, 24 low on-state current 25 and ultrasmall gate length 26 of FETs are realized with the applications of 2D Janus materials, which demonstrate that Janus B 2 P 6 has great potential to be a channel material.…”