Projective phase diagrams for CVD diamond growth from C–H and C–H–O systems

Liu, Zhijie; Zhang, David Wei; Wang, Pengfei; Zhang, Jianyun; Wang, Jitao; Kohse‐Höinghaus, Katharina

doi:10.1016/s0040-6090(00)00776-8

Cited by 10 publications

(7 citation statements)

References 82 publications

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“…The specific deposition conditions of the FL-C:H films are shown in Table 1. Moreover, the amorphous carbon (a-C:H) films were also produced using the same deposition method (applied pulsed d.c. negative voltage 300 V, CH 4 30 sccm, and working gas pressure 27 Pa) for comparison and analysis.…”

Section: Experimental Details Film Preparationmentioning

confidence: 99%

“…In previous study, [30] Zhang et al comparatively investigated the tribological behaviors of typical a-C:H film and FL-C:H film in air condition and found that the typical a-C:H film with the higher friction coefficient of 0.12, and the wear life were also shorter than FL-C:H film. Here, we focus on the tribological behaviors of FL-C:H film and a-C:H film in the lubrication of [Emim][BF 4 ] ILs. Figure 6 shows the a-C:H film and FL-C:H film under [Emim][BF 4 ] lubrication.…”

Section: Mechanical Properties and Friction Behavior Of As-deposited mentioning

confidence: 99%

“…Diamond-like carbon (DLC) films, as the solid lubricant materials, have been the subject of extensive research because of their excellent properties of high mechanical hardness and low friction coefficient. [1][2][3][4] However, successful preparation and application of DLC films have been restricted by the large internal compressive stress and low elasticity. [5] Recently, fullerene-like carbon films catch people's eye because of their unique mechanical properties, which can overcome these main drawbacks.…”

Section: Introductionmentioning

confidence: 99%

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The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

Gong

et al. 2015

Surface & Interface Analysis

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Fullerene-like hydrogenated carbon films were deposited on Si substrate by plasma-enhanced chemical vapor deposition. The microstructures of films were characterized by high-resolution transmission electron microscopy and Raman spectrum. The tribological performance of films was tested by reciprocating ball-on-disc tester under 1-ethyl-3-methylimidazolium tetrafluoroborate ionic liquid. The surface morphology and chemical composition of wear tracks and wear rates were investigated by optical microscope, X-ray photoelectron spectroscopy, and 3D surface profiler. The results indicated that the film with a typical fullerene-like structure embedded into the amorphous sp 2 and sp 3 carbon networks could be prepared successfully, and the film shows a higher hardness (26.7 GPa) and elastic recovery (89.9%) compared with the amorphous carbon film. Furthermore, the film shows a lower friction coefficient at low contact load and friction frequency, and excellent wear-resistance performance at high load and frequency under ionic liquid lubrication. Meanwhile, the wear life of fullerene-like hydrogenated carbon films could be improved significantly using ionic liquid as a lubrication material.

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Section: Experimental Details Film Preparationmentioning

confidence: 99%

Section: Mechanical Properties and Friction Behavior Of As-deposited mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

Gong

et al. 2015

Surface & Interface Analysis

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“…The most common methods to obtain sub-micrometer thin Pt films are physical vapor deposition (PVD) techniques such as sputtering [6,8,12,14,15] and chemical vapor deposition techniques (CVD) such as metal organic CVD [16][17][18] or atomic layer deposition (ALD). [7,19,20] Apart from influencing the thin-film properties, the choice of the deposition method affects the exposure of the substrate or underlying functional layers to kinetic and/or thermal energy. Physical vapor deposition techniques may lead to radiation damage caused by sputtering, electron beam, or UV irradiation.…”

Section: Introductionmentioning

confidence: 99%

Platinum Thin‐Film Electrodes Prepared by a Cost‐Effective Chemical Vapor Deposition Technique

et al. 2016

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Thin-film growth of metallic platinum by aerosol-assisted chemical vapor deposition (AA-CVD) is an attractive alternative to the application of vacuum-based methods. This versatile and scalable technique allows gas phase deposition of thin-films from nebulized precursor solutions in a simple, open setup at moderate temperatures between 400 and 600 C. We discuss the film growth mechanisms on silicon and zirconia substrates in terms of microstructure, surface coverage, sheet resistance, and thermal stability. Furthermore, the positive influence of Pt thin-films deposited by AA-CVD on the area specific resistance (ASR) of symmetric Pt/YSZ/Pt cells in air is presented.[*] Dr.

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“…Multibit storage function, fast programming speed, low power consumption, high scalability, and easy fabrication process make the resistive switching random access memory (ReRAM) as the most promising candidate to replace conventional devices such as EEPROM (electrically erasable programmable read‐only memory) or FLASH . Many solid‐state materials, such as HfO x , TiO 2 , ZnO, NiO, SiO 2 ‐based, perovskites, solid electrolytes, and polymers were widely investigated for possible application in ReRAM while its device structure still consists of metal/insulator/metal (MIM) stacking configuration, which is universally considered as the simplest memory structure. Its resistive switching (RS) behavior is mainly dominated by migration of oxygen ions and related defects confirmed by mapping of oxygen vacancies from X‐ray absorption spectroscopy …”

mentioning

confidence: 99%

Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

Huang

Lin

Tsai

et al. 2015

Adv Elect Materials

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including the migration of oxygen ions and oxygen defi ciencies. Furthermore, nanoscale devices using the TCO layer as the memristive material with repeatable and robust RS behavior were further developed and demonstrated. We believe the fi ndings would break the understanding of the "simplest" ReRAM MIM confi guration to realize the ReRAM with a "point contact" concept for the highest stacking density for development of 3D ReRAM application.Migration/interexchange of oxygen ions/oxygen vacancies triggered by electrical fi elds in some metal oxides have been theoretically calculated and reported. [ 12,13 ] A calculated electric fi eld of 80 V cm −1 was applied to trigger migration of oxygen vacancies in NiO fi lm [ 13 ] whereas activation energy of 0.05 eV for oxygen vacancies hopping in the HfO 2 was evaluated. [ 12 ] An example of how to transform conductive into RS behaviors was applied on the ITO layer in an ambient condition as shown in Figure 1 a. A two-probe confi guration was taken to directly obtain the RS behavior from the ITO layer as shown in inset in Figure 1 a in order to achieve the migration of oxygen ions in the TCO layers by controlling the electrical fi eld. Note that one W-probe was directly contacted with the TCO thin fi lm and another probe was contacted to the platinum (Pt) electrode, for which the Pt electrode was utilized to prevent the occurrence of the T CàRS in both sides of probes. First, an "Initiation" process, namely a large enough DC bias is needed to trigger the T CàRS characteristics. In the initiation process, the current linearly increases as the bias increases, indicating an ohmic behavior when the W probe contacting with the ITO layer. Once the bias > 5 V, an abruptly drop of the current from 100 mA into tens of µA was achieved, resulting in the transformation of the resistance state from conductive to high resistance states (HRS). A negatively biased SET process was applied to switch the resistance from HRS to low resistance state (LRS), as indicted by the red-triangle curve (Figure 1 a) while the blue-circle curve was obtained as positively biased RESET process was applied to switch the resistance from LRS to HRS. These distinctly resistive changes at different polarities in the ITO layer are called bipolar resistive switching behavior, which could be recognized as digital signals in memory application. Endurance test could be stably obtained over 100 cycles at SET and RESET biases within −1.1 and +1.0 V, respectively, as shown in Figure 1 b. To exclude the infl uence of oxygen under an ambient condition, transformation of RS from conductive behavior on the ITO layer was intentionally conducted in an ultrahigh vacuum (UHV) environment with a pressure of ≈10 −9 Torr as shown in Figure 1 c. Note that initiation, SET and RESET biases are relatively smaller than that of the case in air. The initiation Multibit storage function, fast programming speed, low power consumption, high scalability, and easy fabrication process make the resistive switching random access memory (ReRAM)...

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Projective phase diagrams for CVD diamond growth from C–H and C–H–O systems

Cited by 10 publications

References 82 publications

The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

Platinum Thin‐Film Electrodes Prepared by a Cost‐Effective Chemical Vapor Deposition Technique

Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

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