Projection Exposure with Variable Axis Immersion Lenses: A High-Throughput Electron Beam Approach to “Suboptical” Lithography

Pfeiffer, H. C.

doi:10.1143/jjap.34.6658

Cited by 48 publications

(14 citation statements)

References 13 publications

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“…The scattering contrast is used for the EPL system. 4,5) The pattern area (exposure area) on a reticle is a thin membrane where incident electrons are scattered with no absorption. The projection optics has a contrast aperture near the pupil plane to stop the scatted electron beams in the reticle.…”

Section: Eo Subsystem Conceptmentioning

confidence: 99%

Electro-Optic Characteristics of a Cooled Deuterated Potassium Dihydrogen Phosphate Crystal

Yasuki

Yoshida

Tokita

et al. 2010

Jpn. J. Appl. Phys.

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The EB stepper is an electron beam projection lithography (EPL) system. The EB stepper system is similar to an optical scanning exposure system with a reticle. Nikon has been developing EB stepper on the basis of the optical stepper design. The field size of the electron optical (EO) subsystem of EB stepper (subfield/(SF)) is 1 mm square on a reticle and 250 µm square on a wafer (demagnification: 4×). For full chip exposure, SF exposures are stitched using electron beam deflection and stage movement. A new type of stage has been developed for EB stepper using air guides and linear motors to achieve a high-throughput target. These subsystems are assembled separately at present. In this paper, preliminary results on EB stepper as an exposure system are reported. Progress on infrastructures for EPL is discussed.

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Section: Eo Subsystem Conceptmentioning

confidence: 99%

Electro-Optic Characteristics of a Cooled Deuterated Potassium Dihydrogen Phosphate Crystal

Yasuki

Yoshida

Tokita

et al. 2010

Jpn. J. Appl. Phys.

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“…Several years ago Pfeiffer et al [3,4] at IBM proposed and developed an electron beam system that replaced computer control of the beam with a mask. This concept brought together the advantages of e-beam imaging, namely very high resolution and very large DOF with the high 'data transfer' rate achievable by simple replication of a master mask; this technique was known as PREVAIL.…”

Section: Introductionmentioning

confidence: 99%

Device based evaluation of electron projection lithography

et al. 2005

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As we move technology further and further down the geometry scale we are coming upon imaging situations where our use of existing optical lithography is being questioned due to the lack of process margin in manufacturing lines. This is especially apparent in the imaging of contacts where memory devices, that generally have the densest arrays of these features, may no longer be able to print the desired features. To overcome this it is necessary to either modify the design, a very expensive and time consuming process, or find an imaging process capable of printing the desired features. Electron Projection Lithography (EPL) provides an option to print very small features with a large process margin.In this paper we detail the performance of both memory and logic based designs in an EPL process. We detail the manufacture and results of stencil mask manufacture. Data is also presented showing the imaging results (DOF, exposure latitude, pattern transfer) of features down to 50nm imaged on Nikon's EB1A tool.

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“…1,2 High-performance mask is strongly required to achieve the maximum capability of EPL. 1,2 High-performance mask is strongly required to achieve the maximum capability of EPL.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a continuous diamondlike carbon membrane mask for electron projection lithography

Amemiya

Yamashita²,

Nakatsuka

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thermal analysis of diamondlike carbon membrane masks in projection electron-beam lithographyStress and image-placement distortions of 200 mm low-energy electron projection lithography masks Fabrication of 8 in. high-performance continuous diamondlike carbon ͑DLC͒ membrane masks for electron projection lithography is described. The mask substrate materials and structures were optimized by evaluating the lithographic performance of the mask. The optimum mask consists of a sandwich structure, consisting of a thicker DLC scatter/a CrN x etching stopper/and a thin DLC support membrane on a bulk silicon wafer. The internal stress of each film component can be controlled by adjusting the film deposition conditions. A DLC film can be easily etched by oxygen gas, and the CrN x etching stopper has a high etching durability. Highly accurate pattern properties can be obtained while also meeting performance requirements. The critical dimension accuracy of a DLC scatterer was less than Ϯ5% with a 280-nm-feature size in a 135ϫ43 mm field. The electron aperture transmittance of a 44-nm-thick DLC membrane, measured by energy and angular distribution analysis for membrane, was 13 times as high as the 150-nm-thick SiN x membrane.

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Projection Exposure with Variable Axis Immersion Lenses: A High-Throughput Electron Beam Approach to “Suboptical” Lithography

Cited by 48 publications

References 13 publications

Electro-Optic Characteristics of a Cooled Deuterated Potassium Dihydrogen Phosphate Crystal

Electro-Optic Characteristics of a Cooled Deuterated Potassium Dihydrogen Phosphate Crystal

Device based evaluation of electron projection lithography

Fabrication of a continuous diamondlike carbon membrane mask for electron projection lithography

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