Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997
DOI: 10.1109/pvsc.1997.654226
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Projected performance of three- and four-junction devices using GaAs and GaInP

Abstract: This paper explores the efficiencies expected for three-and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content.

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Cited by 113 publications
(74 citation statements)
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References 8 publications
(2 reference statements)
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“…1,[7][8][9][10][11][12][13][14][15][16] As discussed below, the detailed balance approach yields a smaller J o , and, therefore, a higher efficiency than the ''standard'' solution to the one-dimensional problem. Theoretical efficiencies based on empirical data tend to reflect realistic, rather than ideal, efficiencies.…”
Section: Theoretical Modelsmentioning
confidence: 99%
“…1,[7][8][9][10][11][12][13][14][15][16] As discussed below, the detailed balance approach yields a smaller J o , and, therefore, a higher efficiency than the ''standard'' solution to the one-dimensional problem. Theoretical efficiencies based on empirical data tend to reflect realistic, rather than ideal, efficiencies.…”
Section: Theoretical Modelsmentioning
confidence: 99%
“…Incorporation of this material as a third junction under the currently successful GaInP/GaAs tandem cell has the potential to increase the calculated idealized AM1.5D conversion efficiency (at 500 suns) to more than 46 %, and more than 50 % with the incorporation of a junction in an underlying Ge substrate (3).…”
Section: Introductionmentioning
confidence: 99%
“…However, the Ge band gap is not optimal for the third junction: significantly higher efficiencies would be obtained if the third junction could be fabricated from a 1-eVband-gap material. If this next generation of multijunction devices could be achieved, the Ge junction could be reintroduced under this three-junction stack for a resulting monolithic, two-terminal device with projected real-world efficiencies above 35% for air-mass 0 (AM0) and above 40% for 500-suns terrestrial (3). This evolution of multijunction solar-cell structures from the existing two-junction device to futuregeneration three-and four-junction devices is shown in Figure 1, with projected idealized efficiencies for these devices.…”
Section: Introductionmentioning
confidence: 99%