Progressive breakdown in high-voltage GaN MIS-HEMTs

Warnock, Shireen; Alamo, J.A. del

doi:10.1109/irps.2016.7574531

Cited by 19 publications

(12 citation statements)

References 18 publications

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“…More recently, an alternative explanation based on percolation path theory was proposed to explain increases in gate-leakage currents [10], [12]. This is consistent with the statistical distribution of this degradation.…”

Section: Introductionsupporting

confidence: 70%

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Sasangka

Gao

Gan

et al. 2018

Microelectronics Reliability

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We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < B0 < 0.62 eV) was found to be lower than that of the good devices (B0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

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Section: Introductionsupporting

confidence: 70%

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Sasangka

Gao

Gan

et al. 2018

Microelectronics Reliability

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“…The devices under study are industrially prototyped depletion-mode AlGaN/GaN MIS-HEMTs grown on Si substrate. Previous DC stress studies on these devices revealed a gate insulator breakdown behavior consistent with TDDB in both forward bias (V GS,Stress > 0, V DS = 0 V) and reverse bias (V GS,Stress < V t , V DS > 0 and large) [3], [5], [6].…”

Section: Methodsmentioning

confidence: 52%

“…Like in Si, TDDB in GaN has been shown to follow Weibull statistics and electric field scaling [3], [4]. In addition, it has also been shown that the percolation model, where TDDB is thought to happen when a conduction path is formed by an overlapping of defects generated at random in the dielectric, applies to the GaN MIS-HEMT system [5]. Furthermore, trapping has been shown to have profound effect on TDDB, particularly in the OFF-state [6].…”

Section: Introductionmentioning

confidence: 99%

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Lee

Hurtado

Joh

et al. 2019

2019 IEEE International Reliability Physics Symposium (IRPS)

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“…Under V GS > 0, V DS = 0 stress conditions, I G evolves through three different regimes [121]. For short stress times, the gate current typically decreases due to trapping across the AlGaN barrier [122].…”

Section: Time-dependent Dielectric Breakdown In Gan Mis-hemtsmentioning

confidence: 99%

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Alamo

Lee

2019

IEEE Trans. Electron Devices

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GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.

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Progressive breakdown in high-voltage GaN MIS-HEMTs

Cited by 19 publications

References 18 publications

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

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