Abstract:We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < B0 < 0.62 eV) was found to be lower than that of the good devices (B0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) … Show more
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